TC682CPA datasheet(2/14 Pages) MICROCHIP

2 / 14 page

TC682

DS21453D-page 2

 2002-2012 Microchip Technology Inc.

1.0

ELECTRICAL

CHARACTERISTICS

Absolute Maximum Ratings*

VIN .......................................................................+5.8V

VIN dV/dT ........................................................ 1V/sec

VOUT ...................................................................-11.6V

Short-Circuit Duration - VOUT ..................... Continuous

Power Dissipation (TA 70°C)

8-Pin PDIP ..............................................730 mW

8-Pin SOIC ..............................................470 mW

Operating Temperature Range............. -40°C to +85°C

Storage Temperature (Unbiased) .......-65°C to +150°C

*Stresses

above

those

listed

under

“Absolute

Maximum Ratings” may cause permanent damage to

the device. These are stress ratings only and functional

operation of the device at these or any other conditions

above those indicated in the operation sections of the

specifications is not implied. Exposure to Absolute

Maximum Rating conditions for extended periods may

affect device reliability.

TC682 ELECTRICAL SPECIFICATIONS

Electrical Characteristics: Over operating temperature range, VIN = +5V, test circuit Figure 3-1 unless otherwise noted.

Symbol

Parameter

Min

Typ

Max

Units

Test Conditions

VIN

Supply Voltage Range

2.4

—

5.5

RL = 2 k

IIN

Supply Current

—

185

—

300

400

AR

L = , TA = 25°C

RL = 

ROUT

VOUT Source Resistance

—

140

—

170

180

230

320



– = 10 mA, T

A = 25°C

– = 10 mA

– = 5 mA, V

IN = 2.8V

FOSC

Oscillator Frequency

—

kHz

PEFF

Power Efficiency

—

RL = 2 k, TA = 25°C

VOUTEFF

Voltage Conversion Efficiency

99.9

—

VOUT, RL = 

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