 2002-2012 Microchip Technology Inc.

DS21421E-page 3

TC4423/TC4424/TC4425

1.0

ELECTRICAL

CHARACTERISTICS

Absolute Maximum Ratings †

Supply Voltage ................................................................+22V

Input Voltage, IN A or IN B

DFN ......................................................................... Note 2

PDIP .......................................................................730 mW

SOIC.......................................................................470 mW

† Notice: Stresses above those listed under "Maximum

Ratings" may cause permanent damage to the device. This is

a stress rating only and functional operation of the device at

those or any other conditions above those indicated in the

operational sections of this specification is not intended.

Exposure to maximum rating conditions for extended periods

may affect device reliability.

DC CHARACTERISTICS

Parameters

Sym

Min

Typ

Max

Units

Conditions

Input

Logic ‘1’, High Input Voltage

2.4

—

—

V

Logic ‘0’, Low Input Voltage

——

0.8

V

Input Current

–1

—

1

µA

0V

V

Output

High Output Voltage

—

—

V

Low Output Voltage

—

—

0.025

V

Output Resistance, High

—2.8

5



Output Resistance, Low

—3.5

5



Peak Output Current

—3

—

A

Latch-Up Protection With-

stand Reverse Current

—

>1.5

—

A

Duty cycle

2%, t 300 µsec.

Switching Time (Note 1)

Rise Time

—23

35

ns

Figure 4-1, Figure 4-2,

Fall Time

—25

35

ns

Figure 4-1, Figure 4-2,

Delay Time

—33

75

ns

Figure 4-1, Figure 4-2,

Delay Time

—38

75

ns

Figure 4-1, Figure 4-2,

Power Supply

Power Supply Current

—

—

1.5

0.15

2.5

0.25

mA

Note 1:

Switching times ensured by design.

2:

Package power dissipation is dependent on the copper pad area on the PCB.