SBAS16HT3G datasheet(2/4 Pages) ONSEMI

Teilenummer	SBAS16HT3G

Bauteilbeschribung	Switching Diode

PDF	4 Pages

Scroll/Zoom	100%

Hersteller	ONSEMI [ON Semiconductor]

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BAS16H, SBAS16H

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Reverse Voltage Leakage Current

(VR = 100 Vdc)

(VR = 75 Vdc, TJ = 150°C)

(VR = 25 Vdc, TJ = 150°C)

−

1.0

mAdc

Reverse Breakdown Voltage

(IBR = 100 mAdc)

V(BR)

100

−

Vdc

Forward Voltage

(IF = 1.0 mAdc)

(IF = 10 mAdc)

(IF = 50 mAdc)

(IF = 150 mAdc)

−

715

855

1000

1250

Diode Capacitance

(VR = 0, f = 1.0 MHz)

−

2.0

Forward Recovery Voltage

(IF = 10 mAdc, tr = 20 ns)

VFR

−

1.75

Vdc

Reverse Recovery Time

(IF = IR = 10 mAdc, RL = 50 W)

trr

−

6.0

Stored Charge

(IF = 10 mAdc to VR = 5.0 Vdc,

RL = 500 W)

−

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