FJN13003 datasheet(1/5 Pages) FAIRCHILD

Teilenummer	FJN13003

Bauteilbeschribung	NPN Silicon Transistor Planar Silicon Transistor

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Hersteller	FAIRCHILD [Fairchild Semiconductor]

Direct Link	http://www.fairchildsemi.com

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Rev. A, July 2001

NPN Silicon Transistor Planar Silicon Transistor

Absolute Maximum Ratings T

C=25°C unless otherwise noted

* Pulse Test: Pulse Width=5ms, Duty Cycle < 10%

Electrical Characteristics T

a=25°C unless otherwise noted

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

700

V

VCEO

Collector-Emitter Voltage

400

V

VEBO

Emitter-Base Voltage

9

V

IC

Collector Current (DC)

1.5

A

ICP

*Collector Current (Pulse)

3

A

IB

Base Current (DC)

0.75

A

IBP

*Base Current (Pulse)

1.5

A

PC

Collector Power Dissipation(Ta=25°C)

1.1

W

TJ

Junction Temperature

150

°C

TSTG

Storage Temperature

- 65 ~ 150

°C

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

BVCBO

Collector-Base Breakdown Voltage

IC=500µA, IE=0

700

V

BVCEO

Collector-Emitter Breakdown Voltage

IC=5mA, IB=0

400

V

BVEBO

Emitter-Base Breakdown Voltage

IE=500µA, IC=0

9

V

IEBO

Emitter Cut-off Current

VEB=9V, IC=0

10

µA

hFE

DC Current Gain

VCE=2V, IC=0.5A

9

21

VCE=2V, IC=1.0A

5

VCE (sat)

Collector-Emitter Saturation Voltage

IC=0.5A, IB=0.1A

0.5

V

IC=1.0A, IB=0.25A

1.0

V

IC=1.5A, IB=0.5A

3.0

V

VBE (sat)

Base-Emitter Saturation Voltage

IC=0.5A, IB=0.1A

1.0

V

IC=1.0A, IB=0.25A

1.2

V

fT

Current Gain Bandwidth Product

VCE=10V, IC=0.1A

4

MHz

tON

Turn ON Time

VCC=125V, IC=1A,

IB1=0.2A, IB2=-0.2A,

RL = 125Ω

1.1

µs

tSTG

Storage Time

4.0

µs

tF

Fall Time

0.7

µs

FJN13003

High Voltage Switch Mode Application

• High Speed Switching

• Suitable for Electronic Ballast up to 21W

1. Emitter 2. Collector 3.Base

TO-92

1

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