DS92001

SNLS147F – JUNE 2002 – REVISED APRIL 2013

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Table 1. Functional Operation

BLVDS Inputs

BLVDS Outputs

[IN+]

− [IN−]

OUT+

OUT

−

VID

≥ 0.1V

H

L

VID

≤ −0.1V

L

H

−0.1V ≤ VID ≤ 0.1V

Undefined

Undefined

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

Absolute Maximum Ratings

(1) (2)

−0.3V to +4V

LVCMOS/LVTTL Input Voltage (EN)

B/LVDS Receiver Input Voltage (IN+, IN

−)

−0.3V to +4V

BLVDS Driver Output Voltage (OUT+, OUT

−)

−0.3V to +4V

BLVDS Output Short Circuit Current

Continuous

Junction Temperature

+150°C

Storage Temperature Range

−65°C to +150°C

Lead Temperature Range Soldering (4 sec.)

+260°C

Maximum Package Power Dissipation at D Package

726 mW

25°C

Derate D Package

5.8 mW/°C above +25°C

NGK Package

2.44 W

Derate NGK Package

19.49 mW/°C above +25°C

ESD Ratings

(HBM, 1.5k

Ω, 100pF)

≥2.5kV

(EIAJ, 0

Ω, 200pF)

≥250V

(1)

“Absolute Maximum Ratings” are those values beyond which the safety of the device cannot be ensured. They are not meant to imply

that the device should be operated at these limits. The table of “Electrical Characteristics” specifies conditions of device operation.

(2)

If Military/Aerospace specified devices are required, please contact the TI Sales Office/Distributors for availability and specifications.

Recommended Operating Conditions

Min

Typ

Max

Units

3.0

3.3

3.6

V

0.1

2.4

|V|

Operating Free Air Temperature

−40

+25

+85

°C

B/LVDS Input Rise/Fall 20% to 80%

2

20

ns

2

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