IXYS reserves the right to change limits, test conditions, and dimensions.

IXTH 30N60P IXTQ 30N60P IXTT 30N60P

IXTV 30N60P IXTV 30N60PS

Fig. 2. Extended Output Characteristics

@ 25

0

5

10

15

20

25

30

35

40

45

50

55

60

0

3

6

9

12

15

18

21

24

27

30

8V

7V

5V

6.5V

6V

5.5V

Fig. 1. Output Characteristics

@ 25

0

3

6

9

12

15

18

21

24

27

30

01

23

45

67

8

8V

7V

5.5V

5V

6.5V

6V

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ. Max.

g

fs

V

22

25

S

C

iss

5050

pF

C

oss

V

GS

= 0 V, V

540

pF

C

rss

53

pF

t

d(on)

29

ns

t

r

V

20

ns

t

d(off)

R

G

= 4

Ω (External)

80

ns

t

f

25

ns

Q

g(on)

82

nC

Q

gs

V

28

nC

Q

gd

30

nC

R

thJC

0.23

° C/W

R

thCS

0.21

° C/W

Source-Drain Diode

Characteristic Values

(T

Symbol

Test Conditions

Min.

Typ. Max.

I

S

V

30

A

I

SM

Repetitive

80

A

V

SD

I

1.5

V

Pulse test, t

≤300 µs, duty cycle d≤ 2 %

t

rr

I

500

ns

Q

RM

V

4.0

µC

IXYS MOSFETs and IGBTs are covered by 4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

one or moreof the following U.S. patents:

4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405B2

6,759,692

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2