IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXEL40N400

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

I

14

24

S

I

SC

I

200

A

V

C

ies

6040

pF

C

oes

V

278

pF

C

res

120

pF

R

Gint

5.2

Ω

Q

g(on)

275

nC

Q

ge

I

63

nC

Q

gc

134

nC

t

d(on)

160

ns

t

ri

100

ns

E

on

55

mJ

t

d(off)

630

ns

t

fi

425

ns

E

off

165

mJ

t

d(on)

155

ns

t

ri

105

ns

E

on

85

mJ

t

d(off)

715

ns

t

fi

455

ns

E

off

205

mJ

R

thJC

0.26 °C/W

R

thCK

(Pressure Mount)

0.15

°C/W

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,860,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Pin 1 = Gate

Pin 2 = Emitter

Pin 3 = Collector

Tab 4 = Isolated

SYM

INCHES

MILLIMETER

MIN

MAX

MIN

MAX

A

0.190

0.205

4.83

5.21

A1

0.102

0.118

2.59

3.00

A2

0.046

0.055

1.17

1.40

b

0.045

0.055

1.14

1.40

b1

0.063

0.072

1.60

1.83

b2

0.058

0.068

1.47

1.73

c

0.020

0.029

0.51

0.74

D

1.020

1.040

25.91

26.42

E

0.770

0.799

19.56

20.29

e

0.150 BSC

3.81 BSC

e1

0.450 BSC

11.43 BSC

L

0.780

0.820

19.81

20.83

L1

0.080

0.102

2.03

2.59

Q

0.210

0.235

5.33

5.97

Q1

0.490

0.513

12.45

13.03

R

0.150

0.180

3.81

4.57

R1

0.100

0.130

2.54

3.30

S

0.668

0.690

16.97

17.53

T

0.801

0.821

20.34

20.85

U

0.065

0.080

1.65

2.03

e1

e1

3

1 2

c

E

b3

S

b2

b1

e

4

+

Inductive load, T

I

V

Note 3

Inductive load, T

I

V

Note 3

Notes:

1. Pulse test, t

≤ 300μs, duty cycle, d ≤ 2%.

2. Part must be heatsunk for high-temp I

3. Switching times & energy losses may increase for higher V