IXYS reserves the right to change limits, test conditions, and dimensions.

IXTH200N10T

IXTQ200N10T

IXYS REF: T_200N10T(6V)9-30-08-D

Fig. 7. Input Admittance

0

25

50

75

100

125

150

175

200

225

250

3.5

4.0

4.5

5.0

5.5

6.0

6.5

7.0

7.5

25ºC

- 40ºC

Fig. 8. Transconductance

0

20

40

60

80

100

120

140

160

0

25

50

75

100

125

150

175

200

225

250

25ºC

150ºC

Fig. 9. Forward Voltage Drop of

Intrinsic Diode

0

30

60

90

120

150

180

210

240

270

300

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

Fig. 10. Gate Charge

0

1

2

3

4

5

6

7

8

9

10

0

20

40

60

80

100

120

140

160

Fig. 11. Capacitance

100

1,000

10,000

100,000

0

5

10

15

20

25

30

35

40

Ciss

Crss

Coss

Fig. 12. Maximum Transient Thermal

Impedance

0.01

0.10

1.00

0.0001

0.001

0.01

0.1

1

10

Pulse Width - Seconds