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APT30M36B2FLL Datenblatt(PDF) 4 Page - Microsemi Corporation

Teilenummer APT30M36B2FLL
Bauteilbeschribung  POWER MOS 7 FREDFET
PDF  5 Pages
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Hersteller  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APT30M36B2FLL Datenblatt(HTML) 4 Page - Microsemi Corporation

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APT30M36B2FLL_LFLL
I
D (A)
I
D (A)
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
ID (A)
R
G, GATE RESISTANCE (Ohms)
FIGURE 16, SWITCHING ENERGY vs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
V
DD = 200V
R
G = 5Ω
T
J = 125°C
L = 100µH
td(on)
td(off)
Eon
Eoff
Eon
Eoff
tr
tf
V
DD = 200V
R
G = 5Ω
T
J = 125°C
L = 100µH
40
60
80
100
120
140
40
60
80
100
120
140
40
60
80
100
120
140
0
5
10 15 20 25 30
35 40 45 50
80
70
60
50
40
30
20
10
0
2000
1500
1000
500
0
V
DD = 200V
I
D = 84A
T
J = 125°C
L = 100µH
E
ON includes
diode reverse recovery.
V
DD
= 200V
R
G
= 5
Ω
T
J
= 125°C
L = 100µH
E
ON includes
diode reverse recovery.
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE10,MAXIMUMSAFEOPERATINGAREA
FIGURE11,CAPACITANCEvsDRAIN-TO-SOURCEVOLTAGE
Qg,TOTALGATECHARGE(nC)
V
SD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE12,GATECHARGESvsGATE-TO-SOURCEVOLTAGE
FIGURE13,SOURCE-DRAINDIODEFORWARDVOLTAGE
1
5
10
50 100
300
0
10
20
30
40
50
0
20
40
60 80 100 120 140 160 180
0.3
0.5
0.7
0.9
1.1
1.3
1.5
TC=+25°C
TJ=+150°C
SINGLE PULSE
336
100
50
10
5
1
16
14
12
10
8
6
4
2
0
I
D = 84A
20,000
10,000
5,000
1,000
500
100
10
200
100
50
10
5
1
OPERATIONHERE
LIMITEDBYRDS(ON)
Crss
Coss
Ciss
10mS
100µS
1mS
VDS=150V
VDS=60V
VDS=240V
TJ=+150°C
TJ=+25°C
140
120
100
80
60
40
20
0
3000
2500
2000
1500
1000
500
0



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