TSU102 datasheet(10/33 Pages) STMICROELECTRONICS

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Electrical characteristics

TSU101, TSU102, TSU104

10/33

DocID024317 Rev 2

Slew rate (10 % to 90 %)

RL = 1 MΩ, CL = 60 pF,

Vout = 0.3 V to (VCC+ - 0.3 V)

3V/ms

Equivalent input noise

voltage

f = 100 Hz

240

f = 1 kHz

225

∫ en

Low-frequency

peak-to-peak input noise

Bandwidth: f = 0.1 to 10 Hz

8.1

µVpp

Equivalent input noise

current

f = 100 Hz

0.18

f = 1 kHz

3.5

trec

Overload recovery time

100 mV from rail in comparator

RL = 100 kΩ, VID= ±VCC

-40 °C < T< 85 °C

µs

EMIRR

Electromagnetic

interference rejection ratio(3)

Vin = -10 dBm, f = 400 MHz

Vin = -10 dBm, f = 900 MHz

Vin = -10 dBm, f = 1.8 GHz

Vin = -10 dBm, f = 2.4 GHz

1. Typical value is based on the Vio drift observed after 1000h at 125 °C extrapolated to 25 °C using the Arrhenius law and

assuming an activation energy of 0.7 eV. The operational amplifier is aged in follower mode configuration.

2. Guaranteed by design.

3. Based on evaluations performed only in conductive mode.

Table 5. Electrical characteristics at Vcc+ = 5 V with Vcc- = 0 V, Vicm = Vcc/2, Tamb = 25 ° C, and

RL = 1 MΩ connected to Vcc/2 (unless otherwise specified) (continued)

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

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