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BAT85 Datenblatt(PDF) 2 Page - NXP Semiconductors

Teilenummer BAT85
Bauteilbeschribung  Schottky barrier single diode
PDF  8 Pages
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Hersteller  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

BAT85 Datenblatt(HTML) 2 Page - NXP Semiconductors

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NXP Semiconductors
BAT85
Schottky barrier single diode
BAT85
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved
Product data sheet
24 July 2012
2 / 8
3. Ordering information
Table 3.
Ordering information
Package
Type number
Name
Description
Version
BAT85
DO-34
hermetically sealed glass package; axial leaded; 2 leads
SOD68
4. Marking
Table 4.
Marking codes
Type number
Marking code
BAT85
marking band
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VR
reverse voltage
-
30
V
IF
forward current
-
200
mA
IF(AV)
average forward current
δ ≤ 0.5 ; f = 20 kHz; PCB mounting,
lead length = 4 mm; half sine wave
-
200
mA
IFRM
repetitive peak forward current tp ≤ 1 s; δ ≤ 0.5
-
300
mA
IFSM
non-repetitive peak forward
current
tp ≤ 10 ms; Tj(init) = 25 °C
-
5
A
Tj
junction temperature
-
125
°C
Tamb
ambient temperature
-65
125
°C
Tstg
storage temperature
-65
150
°C
6. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
[1]
-
-
320
K/W
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.



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