STF5N62K3 datasheet(4/19 Pages) STMICROELECTRONICS

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Electrical characteristics

STB/D/F/P/U5N62K3

4/19

Doc ID 17361 Rev 2

Electrical characteristics

(Tcase =25 °C unless otherwise specified)

Table 4.

On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

ID = 1 mA, VGS = 0

620

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = Max rating

VDS = Max rating, TC=125 °C

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 20 V; VDS=0

±10

µA

VGS(th)

Gate threshold voltage VDS = VGS, ID = 50 µA

3.75

4.5

RDS(on)

Static drain-source on

resistance

VGS = 10 V, ID = 2.1 A

1.28

1.6

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 50 V, f = 1 MHz,

VGS = 0

680

COSS eq

(1)

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS

Equivalent output

capacitance

VGS = 0, VDS = 0 to 496 V

16.6

Gate input resistance

f=1 MHz open drain

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 496 V, ID = 4.2 A,

VGS = 10 V

(see Figure 20)

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