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MCR03EZPFX1002 Datenblatt(PDF) 18 Page - International Rectifier

Teilenummer MCR03EZPFX1002
Bauteilbeschribung  HIGHLY EFFICIENT INTEGRATED SYNCHRONOUS BUCK REGULATOR FOR DDR APPLICATIONS
PDF  32 Pages
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Hersteller  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

MCR03EZPFX1002 Datenblatt(HTML) 18 Page - International Rectifier

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Rev 16.0
18
PD-97660
IR3831WMPbF
Where:
D is the Duty Cycle
I
RMS is the RMS value of the input capacitor
current.
I
o is the output current.
For I
o=8 A and D = 0.0625, the IRMS = 1.94 A
Ceramic capacitors are recommended due to
their peak current capabilities. They also feature
low ESR and ESL at higher frequency which
enables better efficiency. For this application, it is
advisable to have 3x10uF 16V ceramic capacitors
ECJ-3YX1C106K from Panasonic. In addition to
these, although not mandatory, a 330uF 25V
SMD capacitor EEV-FK1E331P from Panasonic
may be used as a bulk capacitor, and is
recommended if the input power supply is not
located close to the converter.
Inductor Selection
The inductor is selected based on output power,
operating frequency and efficiency requirements.
A low inductor value results in a smaller size and
faster response to a load transient but poor
efficiency and high output noise due to large
ripple current. Generally, the selection of the
inductor value can be reduced to the desired
maximum ripple current in the inductor
. The
optimum point is usually found between 20% and
50% ripple of the output current.
For the buck converter, the inductor value for the
desired
operating
ripple
current
can
be
determined using the following relation:
Where:
If
Δi ≈ 35%(I
o), then the output inductor is
calculated to be 0.63μH. Select L=0.6 μH.
The MPL104-0R6 from Delta provides a compact,
low profile inductor suitable for this application.
Bootstrap Capacitor Selection
To drive the Control FET, it is necessary to
supply a gate voltage at least 4V greater than the
voltage at the SW pin, which is connected the
source of the Control FET . This is achieved by
using a bootstrap configuration, which comprises
the internal bootstrap diode and an external
bootstrap capacitor (C6), as shown in Fig. 11.
The operation of the circuit is as follows: When
the lower MOSFET is turned on, the capacitor
node connected to SW is pulled down to ground.
The capacitor charges towards V
cc through the
internal bootstrap diode, which has a forward
voltage drop V
D. The voltage Vc across the
bootstrap capacitor C6 is approximately given as
When the upper MOSFET turns on in the next
cycle, the capacitor node connected to SW rises
to the bus voltage V
in. However, if the value of C6
is appropriately chosen, the voltage V
c across C6
remains approximately unchanged and the
voltage at the Boot pin becomes
A bootstrap capacitor of value 0.1uF is suitable
for most applications.
Input Capacitor Selection
The ripple current generated during the on time of
the upper MOSFET should be provided by the
input capacitor. The RMS value of this ripple is
expressed by:
....(12)
..........
..........
)
( D
D
I
I
o
RMS
=
1
(13)
..
..........
..........
..........
in
o
V
V
D
=
)
( i
Δ
cycle
Duty
time
on
Turn
frequency
Switching
current
ripple
Inductor
Voltage
Output
voltage
input
Maximum
=
=
=
=
=
=
D
Δt
F
Δi
V
V
s
o
in
()
(14)
...
..........
..........
*
;
s
in
o
o
in
s
o
in
F
i
V
V
V
V
L
F
D
t
t
i
L
V
V
Δ
=
=
Δ
Δ
Δ
=
1
Fig. 11. Bootstrap circuit to generate
Vc voltage
(11)
..........
..........
..........
..........
D
cc
in
Boot
V
V
V
V
+
(10)
..........
..........
..........
..........
D
cc
c
V
V
V



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