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BC140/16 Datenblatt(PDF) 2 Page - Comset Semiconductor

Teilenummer BC140/16
Bauteilbeschribung  GENERAL PURPOSE TRANSISTORS
PDF  3 Pages
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Hersteller  COMSET [Comset Semiconductor]
Direct Link  http://comset.halfin.com
Logo COMSET - Comset Semiconductor

BC140/16 Datenblatt(HTML) 2 Page - Comset Semiconductor

  BC140/16 Datasheet HTML 1Page - Comset Semiconductor BC140/16 Datasheet HTML 2Page - Comset Semiconductor BC140/16 Datasheet HTML 3Page - Comset Semiconductor  
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NPN BC140/10 – BC140/16
NPN BC141/10 – BC141/16
16/10/2012
COMSET SEMICONDUCTORS
2/3
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min
Typ
Max
Unit
ICES
Collector – Cutoff Current
IE= 0
VCES= 60 V
BC140
-
-
100
nA
BC141
IE= 0, VCES= 60 V
Tamb = 150°c
BC140
-
-
100
µA
BC141
VCB0
Collector – Base
Breakdown Voltage
IC = 100 µA
IE= 0
BC140
80
-
-
V
BC141
100
-
-
VCE0 (*)
Collector – Emitter
Breakdown Voltage
IC = 30 mA
IB= 0
BC140
40
-
-
V
BC141
60
-
-
VEB0
Emitter – Base
Breakdown Voltage
IE= 100 µA
IC= 0
BC140
7
-
-
V
BC141
VCE(SAT) (*)
Collector-Emitter
saturation Voltage
IC= 100 mA , IB= 10 mA
-
0.1
V
IC= 500 mA , IB= 50 mA
-
0.35
IC= 1 A, IB= 100 mA
-
0.6
1
VBE (*)
Base-Emitter Voltage
IC= 1 A , VCE= 1V
1.25
1.8
hFE (*)
DC Current Gain
IC= 100 µA , VCE= 1
V
-
75
-
-
Gr 10
-
40
-
Gr 16
-
90
-
IC= 100 mA , VCE= 1
V
40
140
250
Gr 10
63
100
160
Gr 16
100
160
250
IC= 1 A , VCE= 1 V
-
26
-
Gr 10
-
20
-
Gr 16
-
30
-
fT
Transition Frequency
IC= 50 mA , VCE= 10 V
50
-
-
MHZ
CCBO
Collector – base
Capacitance
IE= 0 ;VCB= 10V
f = 1 MHZ
-
12
25
pF
toff
Turn-off times
IC=100 mA
IB1=-IB2=5 mA
-
-
850
ns
ton
Turn-on times
IC=100 mA
IB1=1 mA
-
-
250
ns
(*) Pulsed : pulse duration = 300µs, duty cycle = 1%



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