IXTP4N80P datasheet(1/4 Pages) IXYS

Teilenummer	IXTP4N80P

Bauteilbeschribung	PolarHV Power MOSFET N-Channel Enhancement Mode Avalanche Rated

PDF	4 Pages

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Hersteller	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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1 / 4 page

G = Gate

D = Drain

S = Source

TAB = Drain

DS99596E(08/06)

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

Min. Typ.

Max.

BV

DSS

V

GS = 0 V, ID = 250 μA

800

V

GS(th)

V

DS = VGS, ID = 100μA

3.0

5.5

V

I

GSS

V

GS = ±30 V, VDS = 0 V

±100

nA

I

DSS

V

DS = VDSS

5

μA

V

GS = 0 V

T

J = 125°C

150

μA

R

DS(on)

V

GS = 10 V, ID = 0.5 ID25

3.4

Ω

Pulse test, t

≤ 300 μs, duty cycle d ≤ 2 %

PolarHVTM

Power MOSFET

N-Channel Enhancement Mode

Avalanche Rated

Features

International standard packages

Unclamped Inductive Switching (UIS)

rated

Low package inductance

- easy to drive and to protect

Advantages

Easy to mount

Space savings

High power density

TO-263 (IXTA)

TO-220 (IXTP)

D

(TAB)

G

S

G

S

(TAB)

IXTA4N80P

IXTP4N80P

V

DSS

= 800

V

I

D25

= 3.6

A

R

DS(on) ≤

≤≤≤≤ 3.4

Ω

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

800

V

DGR

T

J

= 25

°C to 150°C; R

GS = 1 MΩ

800

V

GSS

Continuous

± 30

V

GSM

Transient

± 40

V

I

D25

T

C = 25°C

3.6

A

I

DM

T

C = 25°C, pulse width limited by TJM

8A

I

AR

T

C = 25°C2

A

E

AR

T

C = 25°C20

mJ

E

AS

T

C = 25°C

250

mJ

dv/dt

I

S

≤ I

DM, di/dt ≤ 100 A/μs, VDD ≤ VDSS,

10

V/ns

T

J

≤ 150°C, R

G = 18 Ω

P

D

T

C = 25°C

100

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6 mm (0.062 in.) from case for 10 s

300

°C

T

SOLD

Plastic body for 10 s

260

°C

M

d

Mounting torque

(TO-220)

1.13/10 Nm/lb.in.

Weight

TO-220

4

g

TO-263

3

g

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