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H5TQ2G43CFR-RDC Datenblatt(PDF) 29 Page - Hynix Semiconductor

Teilenummer H5TQ2G43CFR-RDC
Bauteilbeschribung  2Gb DDR3 SDRAM
PDF  33 Pages
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Hersteller  HYNIX [Hynix Semiconductor]
Direct Link  http://www.skhynix.com/kor/main.do
Logo HYNIX - Hynix Semiconductor

H5TQ2G43CFR-RDC Datenblatt(HTML) 29 Page - Hynix Semiconductor

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Rev. 1.0 / Apr. 2013
29
DDR3-1600 Speed Bins
For specific Notes See "Speed Bin Table Notes" on page 32.
Speed Bin
DDR3-1600K
Unit
Note
CL - nRCD - nRP
11-11-11
Parameter
Symbol
min
max
Internal read
command to first data
tAA
13.75
(13.125)5,11
20
ns
ACT to internal read or
write delay time
tRCD
13.75
(13.125)5,11
—ns
PRE command period
tRP
13.75
(13.125)5,11
—ns
ACT to ACT or REF
command period
tRC
48.75
(48.125)5,11
—ns
ACT to PRE command
period
tRAS
35
9 * tREFI
ns
CL = 5
CWL = 5
tCK(AVG)
3.0
3.3
ns
1,2,3,4,8,12, 13
CWL = 6, 7 tCK(AVG)
Reserved
ns
4
CL = 6
CWL = 5
tCK(AVG)
2.5
3.3
ns
1,2,3,8
CWL = 6
tCK(AVG)
Reserved
ns
1,2,3,4,8
CWL = 7
tCK(AVG)
Reserved
ns
4
CL = 7
CWL = 5
tCK(AVG)
Reserved
ns
4
CWL = 6
tCK(AVG)
1.875
< 2.5
ns
1,2,3,4,8
(Optional)5,11
CWL = 7
tCK(AVG)
Reserved
ns
1,2,3,4,8
CWL = 8
tCK(AVG)
Reserved
ns
4
CL = 8
CWL = 5
tCK(AVG)
Reserved
ns
4
CWL = 6
tCK(AVG)
1.875
< 2.5
ns
1,2,3,8
CWL = 7
tCK(AVG)
Reserved
ns
1,2,3,4,8
CWL = 8
tCK(AVG)
Reserved
ns
1,2,3,4
CL = 9
CWL = 5, 6 tCK(AVG)
Reserved
ns
4
CWL = 7
tCK(AVG)
1.5
<1.875
ns
1,2,3,4,8
(Optional)5,11
CWL = 8
tCK(AVG)
Reserved
ns
1,2,3,4
CL = 10
CWL = 5, 6 tCK(AVG)
Reserved
ns
4
CWL = 7
tCK(AVG)
1.5
<1.875
ns
1,2,3,8
CWL = 8
tCK(AVG)
Reserved
ns
1,2,3,4
CL = 11
CWL = 5, 6,7 tCK(AVG)
Reserved
ns
4
CWL = 8
tCK(AVG)
1.25
<1.5
ns
1,2,3
Supported CL Settings
5, 6, 7, 8, 9, 10, 11
nCK
Supported CWL Settings
5, 6, 7, 8
nCK



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