TPDV40 datasheet(4/7 Pages) STMICROELECTRONICS

4 / 7 page

Characteristics

TPDVxx40

4/7

Doc ID 18270 Rev 1

Figure 9.

Safe operating area below curve

Figure 5.

Relative variation of gate trigger

current and holding current versus

junction temperature

Figure 6.

Non repetitive surge peak on-state

current versus number of cycles

I,I ,I [T ] /

GT H L

,I ,I [T =25°C]

GT H L

T (°C)

IGT

IH & IL

2.5

1.5

0.5

-20

-30

-40

-10

90 100 110 120 130

(A)

TSM

200

250

300

350

150

100

1000

t =10ms

One cycle

Number of cycles

T initial=25°C

Figure 7.

Non-repetitive surge peak on-state

current for a sinusoidal pulse and

corresponding values of I2t

Figure 8.

On-state characteristics (maximum

values)

(A), I t (A s)

TSM

100

10000

1000

510

t (ms)

I t

ITSM

T initial = 25°C

(A)

1000

100

(V)

V =1.02V

R =12m

T max.:

Tj=max

T =25°C

(dV/dt)c(V/µs)

1000

100

(dI/dt)c(A/ms)

T initial = 25°C

100

1000

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