IRFS4127TRLPBF datasheet(2/10 Pages) IRF

2 / 10 page

IRFS/SL4127PbF

www.irf.com

Notes:

Repetitive rating; pulse width limited by max. junction

temperature.

Limited by TJmax, starting TJ = 25°C, L = 0.26mH

RG = 25Ω, IAS = 44A, VGS =10V. Part not recommended for use

above this value .

ISD ≤ 44A, di/dt ≤ 760A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.

Pulse width ≤ 400µs; duty cycle ≤ 2%.

Coss eff. (TR) is a fixed capacitance that gives the same charging time

as Coss while VDS is rising from 0 to 80% VDSS.

Coss eff. (ER) is a fixed capacitance that gives the same energy as

Coss while VDS is rising from 0 to 80% VDSS.

When mounted on 1" square PCB (FR-4 or G-10 Material). For recom

mended footprint and soldering techniques refer to application note #AN-994.

Rθ is measured at TJ approximately 90°C

RθJC value shown is at time zero

Static @ TJ = 25°C (unless otherwise specified)

Symbol

Parameter

Min. Typ. Max. Units

V(BR)DSS

Drain-to-Source Breakdown Voltage

200

–––

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient

–––

0.23

–––

V/°C

RDS(on)

Static Drain-to-Source On-Resistance

–––

18.6

Ω

VGS(th)

Gate Threshold Voltage

3.0

–––

5.0

IDSS

Drain-to-Source Leakage Current

–––

250

IGSS

Gate-to-Source Forward Leakage

–––

100

Gate-to-Source Reverse Leakage

–––

-100

RG(int)

Internal Gate Resistance

–––

3.0

–––

Ω

Dynamic @ TJ = 25°C (unless otherwise specified)

Symbol

Parameter

Min. Typ. Max. Units

gfs

Forward Transconductance

–––

Total Gate Charge

–––

100

150

Qgs

Gate-to-Source Charge

–––

Qgd

Gate-to-Drain ("Miller") Charge

–––

Qsync

Total Gate Charge Sync. (Qg - Qgd)

–––

td(on)

Turn-On Delay Time

–––

Rise Time

–––

td(off)

Turn-Off Delay Time

–––

Fall Time

–––

Ciss

Input Capacitance

–––

5380

–––

Coss

Output Capacitance

–––

410

–––

Crss

Reverse Transfer Capacitance

–––

Coss eff. (ER) Effective Output Capacitance (Energy Related)h ––– 360 –––

Coss eff. (TR) Effective Output Capacitance (Time Related)g

–––

590

–––

Diode Characteristics

Symbol

Parameter

Min. Typ. Max. Units

Continuous Source Current

–––

(Body Diode)

ISM

Pulsed Source Current

–––

300

(Body Diode)

VSD

Diode Forward Voltage

–––

1.3

trr

Reverse Recovery Time

–––

136

–––

TJ = 25°C

VR = 100V,

–––

139

–––

TJ = 125°C

IF = 44A

Qrr

Reverse Recovery Charge

–––

458

–––

TJ = 25°C

di/dt = 100A/µs

–––

688

–––

TJ = 125°C

IRRM

Reverse Recovery Current

–––

8.3

–––

TJ = 25°C

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

µA

ID = 44A

RG = 2.7Ω

VGS = 10V f

VDD = 130V

ID = 44A, VDS =0V, VGS = 10V

TJ = 25°C, IS = 44A, VGS = 0V f

integral reverse

p-n junction diode.

Conditions

VGS = 0V, ID = 250µA

Reference to 25°C, ID = 5mA

VGS = 10V, ID = 44A f

VDS = VGS, ID = 250µA

VDS = 200V, VGS = 0V

VDS = 200V, VGS = 0V, TJ = 125°C

MOSFET symbol

showing the

VDS = 100V

Conditions

VGS = 10V f

VGS = 0V

VDS = 50V

ƒ = 1.0MHz (See Fig.5)

VGS = 0V, VDS = 0V to 160V h(See Fig.11)

VGS = 0V, VDS = 0V to 160V g

Conditions

VDS = 50V, ID = 44A

ID = 44A

VGS = 20V

VGS = -20V

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