2

Electrical Specifications

Sym

Parameters/Condition

Unit

Absolute Max

Vbias

Bias Voltage (RF Input)

V

2

Ibias

Bias Current

mA

1

dBm

+37

Tch

Max channel temperature

°C

150

Notes

1. Operation of this device above any one of these parameters may cause permanent damage

2. With the DC (typical bias) and RF applied to the device at board temperature, Tb = 25° C

Table 2. DC and RF Specifications

Symbol

Parameters / Condition

Unit

Min

Typical

Max

Bias Current

mA

0.11

0.18

0.25

Insertion Loss

at 2 GHz

at 4 GHz

at 6 GHz

dB

0.2

0.25

0.35

Input Return Loss

at 2 GHz

at 6 GHz

dB

20

30

Output Return Loss

at 2 GHz

at 6 GHz

dB

20

30

Directivity

at 2 GHz

at 6 GHz

dB

13

10

Detector output offset voltage

mV

45

62

75

Detector Output Voltage at +20 dBm

mV

710

830

950

Notes

1. Measured data obtained from wafer-probing, losses from measurement system de-embedded from final data, Vbias = 1.5 V applied through a

broadband bias tee.

2. Measured by reversing the detector and applying RF power to the output port. Directivity is defined as the difference in dB between the power

applied in the forward direction and the power required in the reverse direction to produce the same Vdet voltage.

3. Voffset is measured with RF input power turned off.

4. Vdet is measured with +20 dBm RF input power at 4 GHz.