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TC74VHC02FK Datenblatt(PDF) 4 Page - Toshiba Semiconductor

Teilenummer TC74VHC02FK
Bauteilbeschribung  TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
PDF  8 Pages
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Hersteller  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TC74VHC02FK Datenblatt(HTML) 4 Page - Toshiba Semiconductor

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TC74VHC02F/FT/FK
2012-02-29
4
AC Characteristics (input: tr = tf = 3 ns)
Test Condition
Ta = 25°C
Ta =
−40 to 85°C
Characteristics
Symbol
VCC (V)
CL (pF)
Min
Typ.
Max
Min
Max
Unit
15
5.6
7.9
1.0
9.5
3.3 ± 0.3
50
8.1
11.4
1.0
13.0
15
3.6
5.5
1.0
6.5
Propagation delay
time
tpLH
tpHL
5.0 ± 0.5
50
5.1
7.5
1.0
8.5
ns
Input capacitance
CIN
4
10
10
pF
Power dissipation
capacitance
CPD
(Note)
15
pF
Note: CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating
current consumption without load.
Average operating current can be obtained by the equation:
ICC (opr) = CPD·VCC·fIN + ICC/4 (per gate)
Noise Characteristics (input: tr = tf = 3 ns)
Test Condition
Ta = 25°C
Characteristics
Symbol
VCC (V)
Typ.
Limit
Unit
Quiet output maximum dynamic VOL
VOLP
CL = 50 pF
5.0
0.3
0.8
V
Quiet output minimum dynamic VOL
VOLV
CL = 50 pF
5.0
−0.3
−0.8
V
Minimum high level dynamic input voltage
VIHD
CL = 50 pF
5.0
3.5
V
Maximum low level dynamic input voltage
VILD
CL = 50 pF
5.0
1.5
V
Input Equivalent Circuit
INPUT



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