STF18N55M5 datasheet(4/22 Pages) STMICROELECTRONICS

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Electrical characteristics

STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5

4/22

Doc ID 17078 Rev 2

Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 4.

On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

ID = 1 mA, VGS = 0

550

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = Max rating

VDS = Max rating, TC=125 °C

100

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 25 V

100

VGS(th)

Gate threshold voltage VDS = VGS, ID = 250 µA

RDS(on)

Static drain-source on

resistance

VGS = 10 V, ID = 6.5 A

0.18

0.24

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 100 V, f = 1 MHz,

VGS = 0

1352

3.7

Co(tr)

(1)

Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss

when VDS increases from 0 to 80% VDSS

Equivalent

capacitance time

VDS = 0 to 440 V

-98

Co(er)

(2)

Coss eq. energy related is defined as a constant equivalent capacitance giving the same stored energy as

Coss when VDS increases from 0 to 80% VDSS

Equivalent

capacitance energy

-35

Intrinsic gate

resistance

f = 1 MHz open drain

1.7

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 440 V, ID = 6.5 A,

VGS = 10 V

(see Figure 19)

6.3

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