IO134PDB3V2 datasheet(86/212 Pages) MICROSEMI

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Military ProASIC3/EL DC and Switching Characteristics

2-72

Revision 3

Timing Characteristics

Table 2-111 • 1.2 V LVCMOS Wide Range Low Slew

Military-Case Conditions: TJ = 125°C, Worst-Case VCC = 1.14 V, Worst-Case VCCI = 1.4 V

Applicable to Pro I/O Banks for A3PE600L and A3PE3000L Only

Drive

Strength

Speed

Grade

tDOUT

tDP

tDIN

tPY

tPYS tEOUT

tZL

tZH

tLZ

tHZ

tZLS

tZHS Units

100 µA

Std.

0.80

12.61 0.05 2.65 3.75

0.52

12.10 9.50 5.11 4.66 14.31 11.71

–1

0.68

10.72 0.05 2.25 3.19

0.44

10.30 8.08 4.35 3.97 12.17

9.96

Note:

For specific junction temperature and voltage supply levels, refer to Table 2-5 on page 2-8 for derating values.

Table 2-112 • 1.2 V LVCMOS Wide Range High Slew

Military-Case Conditions: TJ = 125°C, Worst-Case VCC = 1.14 V, Worst-Case VCCI = 1.4 V

Applicable to Pro I/O Banks for A3PE600L and A3PE3000L Only

Drive

Strength

Speed

Grade

tDOUT

tDP

tDIN

tPY

tPYS tEOUT

tZL

tZH

tLZ

tHZ

tZLS

tZHS

Unit

100 µA

Std.

0.80

5.16

0.05 2.65 3.75

0.52

4.98

4.39 5.10 4.81

7.19

6.60

–1

0.68

4.39

0.05 2.25 3.19

0.44

4.24

3.74 4.34 4.09

6.11

5.61

Notes:

1. Software default selection highlighted in gray.

2. For specific junction temperature and voltage supply levels, refer to Table 2-5 on page 2-8 for derating values.

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