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TC7S04F Datenblatt(PDF) 3 Page - Toshiba Semiconductor

Teilenummer TC7S04F
Bauteilbeschribung  CMOS Digital Integrated Circuit Silicon Monolithic
PDF  7 Pages
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Hersteller  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TC7S04F Datenblatt(HTML) 3 Page - Toshiba Semiconductor

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TC7S04F/FU
2009-09-30
3
Electrical Characteristics
DC Electrical Characteristics
Ta
= 25°C
Ta
= −40
to 85°C
Characteristics
Symbol
Test Condition
VCC (V)
Min
Typ.
Max
Min
Max
Unit
2.0
1.5
⎯
⎯
1.5
⎯
4.5
3.15
⎯
⎯
3.15
⎯
High level
VIH
⎯
6.0
4.2
⎯
⎯
4.2
⎯
2.0
⎯
⎯
0.5
⎯
0.5
4.5
⎯
⎯
1.35
⎯
1.35
Input voltage
Low level
VIL
⎯
6.0
⎯
⎯
1.8
⎯
1.8
V
2.0
1.9
2.0
⎯
1.9
⎯
4.5
4.4
4.5
⎯
4.4
⎯
IOH = −20 μA
6.0
5.9
6.0
⎯
5.9
⎯
IOH = −2 mA
4.5
4.18
4.31
⎯
4.13
⎯
High level
VOH
VIN = VIL
IOH = −2.6 mA
6.0
5.68
5.80
⎯
5.63
⎯
2.0
⎯
0
0.1
⎯
0.1
4.5
⎯
0
0.1
⎯
0.1
IOL = 20 μA
6.0
⎯
0
0.1
⎯
0.1
IOL = 2 mA
4.5
⎯
0.17
0.26
⎯
0.33
Output
voltage
Low level
VOL
VIN = VIH
IOL = 2.6 mA
6.0
⎯
0.18
0.26
⎯
0.33
V
Input leakage current
IIN
VIN = VCC or GND
6.0
⎯
⎯
±0.1
⎯
±1.0
μA
Quiescent supply current
ICC
VIN = VCC or GND
6.0
⎯
⎯
1.0
⎯
10.0
μA
Note: Output currents are 1/2 compared to TC74HC series models.
AC Electrical Characteristics (CL = 15 pF, input tr = tf = 6 ns, VCC = 5 V)
Ta
= 25°C
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Output transition time
tTLH
tTHL
⎯
⎯
5
10
ns
Propagation delay time
tpLH
tpHL
⎯
⎯
7
15
ns



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