IRFS4229TRLPBF datasheet(6/9 Pages) IRF

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IRFS4229PbF

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Fig 19b. Unclamped Inductive Waveforms

Fig 19a. Unclamped Inductive Test Circuit

V(BR)DSS

IAS

0.01

Ω

D.U.T

VDS

- VDD

DRIVER

15V

20V

VGS

Fig 20a. Gate Charge Test Circuit

Fig 20b. Gate Charge Waveform

Vds

Vgs

Vgs(th)

Qgs1 Qgs2

Qgd

Qgodr

Fig 18.

Diode Reverse Recovery Test Circuit for HEXFET® Power MOSFETs

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

P.W.

Period

di/dt

Diode Recovery

dv/dt

Ripple

≤ 5%

Body Diode

Forward Drop

Re-Applied

Voltage

Reverse

Recovery

Current

Body Diode Forward

Current

VGS=10V

VDD

ISD

Driver Gate Drive

D.U.T. ISD Waveform

D.U.T. VDS Waveform

Inductor Curent

D =

P.W.

Period

*** VGS = 5V for Logic Level Devices

***

VDD

• dv/dt controlled by RG

• Driver same type as D.U.T.

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

D.U.T

* Use P-Channel Driver for P-Channel Measurements

** Reverse Polarity for P-Channel

VCC

DUT

IRFS4229TRLPBF Datenblatt(PDF) 6 Page - International Rectifier

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