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MP4688DN Datenblatt(PDF) 2 Page - Monolithic Power Systems

Teilenummer MP4688DN
Bauteilbeschribung  80V Input, 1A High Power LED Driver
PDF  11 Pages
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Hersteller  MPS [Monolithic Power Systems]
Direct Link  http://www.monolithicpower.com
Logo MPS - Monolithic Power Systems

MP4688DN Datenblatt(HTML) 2 Page - Monolithic Power Systems

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MP4688 – 80V INPUT, 1A HIGH POWER LED DRIVER
MP4688 Rev. 1.12
www.MonolithicPower.com
2
3/28/2012
MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited.
© 2012 MPS. All Rights Reserved.
ORDERING INFORMATION
Part Number*
Package
Top Marking
Free Air Temperature (TA)
MP4688DN
SOIC8E
MP4688DN
–40
°C to +85°C
MP4688DS
SOIC8
MP4688DS
–40
°C to +85°C
* For Tape & Reel, add suffix –Z (e.g. MP4688DN–Z);
For RoHS compliant packaging, add suffix –LF (e.g. MP4688DN–LF–Z)
* For Tape & Reel, add suffix –Z (e.g. MP4688DS–Z);
For RoHS compliant packaging, add suffix –LF (e.g. MP4688DS–LF–Z)
PACKAGE REFERENCE
FB
N/C
VIN
BST
GND
EN
DIM
SW
1
2
3
4
8
7
6
5
TOP VIEW
SOIC8E
SOIC8
ABSOLUTE MAXIMUM RATINGS (1)
Supply Voltage (VIN).....................–0.3V to +80V
Switch Voltage (VSW)............ –0.5V to VIN + 0.5V
BST to SW .....................................–0.3V to +6V
All Other Pins.................................–0.3V to +6V
Junction Temperature...............................150
°C
Continuous Power Dissipation (TA = +25°C)
(2)
SOIC8E (Exposed Pad)............................. 2.5W
SOIC8 ........................................................ 1.3W
Lead Temperature ....................................260
°C
Storage Temperature.............. –65°C to +150
°C
Recommended Operating Conditions
(3)
Supply Voltage VIN ...........................4.5V to 75V
EN and DIM Voltages ...........................0V to 5V
Operating Junct. Temp. .......... –40
°C to +125°C
Thermal Resistance
(4)
θJA
θJC
SOIC8E (Exposed Pad) ..........50 ...... 10 ...
°C/W
SOIC8 ....................................96 ...... 45 ...
°C/W
Notes:
1) Exceeding these ratings may damage the device.
2) The maximum allowable power dissipation is a function of the
maximum junction temperature TJ(MAX), the junction-to-
ambient thermal resistance θJA, and the ambient temperature
TA. The maximum allowable continuous power dissipation at
any ambient temperature is calculated by PD(MAX)=(TJ(MAX)-
TA)/θJA. Exceeding the maximum allowable power dissipation
will cause excessive die temperature, and the regulator will go
into thermal shutdown. Internal thermal shutdown circuitry
protects the device from permanent damage.
3) The device is not guaranteed to function outside of its
operating conditions.
4) Measured on JESD51-7 4-layer board.



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