AMMC004AWP datasheet(23/39 Pages) AMD

23 / 39 page

AmMC0XXA

PREL I M I N AR Y

Note: D7 is rechecked even if D5 = 1 because D7 may

change simultaneously with D5.

Figure 6.

Data Polling Algorithm

WORD-WIDE PROGRAMMING AND

ERASING

Word-Wide Programming

The Word-Wide Programming sequence will be as

usual per Table 5 or 8. The Program word command is

A0A0H. Each byte is independently programmed. For

example, if the high byte of the word indicates the

successful completion of programming via one of its

write status bits such as D15, software polling should

continue to monitor the low byte for write completion

and data verification, or vice versa. During the

Embedded Programming operations the device exe-

cutes programming pulses in 8

µs increments. Status

reads provide information on the progress of the byte

programming relative to the last complete write pulse.

Status information is automatically updated upon com-

pletion of each internal write pulse. Status information

does not change within the 8

µs write pulse width.

Word-Wide Sector Erasing

The Word-Wide Sector Erasing of a memory device pair

is similar to word-wide programming. The erase word

command is a six-bus-cycle command sequence (see

Tables 5 and 8). Each byte is independently erased and

verified. Word-wide erasure reduces total erase time

when compared to byte erasure. Each Flash memory

device in the card may erase at different rates. There-

fore, each device (byte) must be verified separately.

START

DQ7 = Data?

Yes

DQ5 = 1?

Yes

DQ7 = Data?

Yes

FAIL

PASS

20975D-7

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