CD00257532 datasheet(8/19 Pages) STMICROELECTRONICS

8 / 19 page

Electrical specifications

L4949ED-E, L4949EP-E

8/19

Doc ID 16823 Rev 1

2.3

Electrical characteristics

VS = 14 V; -40 °C < Tj < 125 °C unless otherwise specified

Table 5.

Electrical characteristics

Symbol

Parameter

Test condition

Min.

Typ.

Max.

Unit

Output voltage

TJ = 25 °C; IO = 1 mA

4.95

5.05

Output voltage

6 V < VIN < 28 V, 1 mA < IO < 50 mA

4.90

5.10

Output voltage

VIN = 40 V;

T < 1s; 5mA < IO < 100 mA

4.75

5.25

VDP

Dropout voltage

IO = 10 mA

IO = 50 mA

IO = 100 mA

0.1

0.2

0.3

0.25

0.4

0.5

VIO

Input to output voltage

difference in undervoltage

condition

VIN = 4 V, IO = 35 mA

0.4

Iouth

(1)

Max output leakage

VIN = 25 V, VO = 5.5 V

µA

VOL

Line regulation

6 V < VIN < 28 V; IO = 1 mA

VOLO

Load regulation

1 mA < IO < 100 mA

ILIM

Current limit

VO = 4.5 V

VO = 4.5 V; TJ = 25 °C

VO = 0 V

(2)

105

120

200

100

400

IQSE

Quiescent current

IO = 0.3 mA; TJ < 100 °C

200

300

µA

Quiescent current

IO = 100 mA

With this test we guarantee that with no output current the output voltage will not exceed 5.5V

Foldback characteristic

Table 6.

Reset

Symbol

Parameter

Test condition

Min.

Typ.

Max.

Unit

VRT

Reset threshold voltage

VO -

0.5V

VRTH

Reset threshold hysteresis

100

200

tRD

Reset pulse delay

CT = 100 nF; TR ≥ 100 µs

100

180

VRL

Reset output low voltage

RRES = 10 KΩ to VO VS ≥ 1.5V

0.4

IRH

Reset output high leakage

current

VRES = 5 V

µA

VCTth

Delay comparator threshold

VCTth, hy

Delay comparator threshold

hysteresis

100

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