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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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STM32F215RG Datenblatt(PDF) 90 Page - STMicroelectronics |
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STM32F215RG Datenblatt(HTML) 90 Page - STMicroelectronics |
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90 / 175 page  Electrical characteristics STM32F21xxx 90/175 DocID17050 Rev 9 Note: For information on electing the crystal, refer to the application note AN2867 “Oscillator design guide for ST microcontrollers” available from the ST website www.st.com. Figure 31. Typical application with a 32.768 kHz crystal 6.3.9 Internal clock source characteristics The parameters given in Table 31 and Table 32 are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 13. High-speed internal (HSI) RC oscillator Table 30. LSE oscillator characteristics (fLSE = 32.768 kHz) (1) 1. Guaranteed by design, not tested in production. Symbol Parameter Conditions Min Typ Max Unit RF Feedback resistor - 18.4 - M Ω IDD LSE current consumption - - 1 µA gm Oscillator Transconductance 2.8 - - µA/V tSU(LSE)(2) 2. tSU(LSE) is the startup time measured from the moment it is enabled (by software) to a stabilized 32.768 kHz oscillation is reached. This value is measured for a standard crystal resonator and it can vary significantly with the crystal manufacturer startup time VDD is stabilized - 2 - s ai17531 OSC32_OU T OSC32_IN fLSE CL1 RF STM32F 32.768 kH z resonator Resonator with integrated capacitors Bias controlled gain CL2 Table 31. HSI oscillator characteristics (1) 1. VDD = 3.3 V, TA = –40 to 105 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit fHSI Frequency - 16 - MHz ACCHSI Accuracy of the HSI oscillator User-trimmed with the RCC_CR register(2) -- 1 % Factory- calibrated TA = –40 to 105 °C –8 - 4.5 % TA = –10 to 85 °C –4 - 4 % TA = 25 °C –1 - 1 % tsu(HSI)(3) HSI oscillator startup time -2.2 4 µs IDD(HSI) HSI oscillator power consumption -60 80 µA |
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