8-Megabit

(1M x 8)

Single 2.7-volt

Battery-Voltage

™

Flash Memory

AT49BV080

AT49BV080T

AT49LV080

AT49LV080T

Features

- 25 mA Active Current

- 50

µA CMOS Standby Current

- 8 x 14 mm CBGA

Pin Configurations

Pin Name

Function

A0 - A19

Addresses

CE

Chip Enable

OE

Output Enable

WE

Write Enable

RESET

Reset

RDY/BUSY

Ready/Busy Output

I/O0 - I/O7

Data Inputs/Outputs

The AT49BV/LV080 are 3-volt-only in-system Flash Memory devices. Their 8 mega-

bits of memory are organized as 1,024,576 words by 8 bits. Manufactured with At-

mel’s advanced nonvolatile CMOS technology, the devices offer access times to 120

ns with power dissipation of just 90 mW over the commercial temperature range.

When the device is deselected, the CMOS standby current is less than 50

µA.

The device contains a user-enabled "boot block" protection feature. Two versions of

the feature are available: the AT49BV/LV080 locates the boot block at lowest order

addresses ("bottom boot"); the AT49BVLV080T locates it at highest order addresses

("top boot").

Description

(continued)

TSOP Top View

Type 1

0812A–8/97

A

B

C

D

E

F

1

234567

A5

A4

A6

A3

A2

A1

A8

A7

A9

I/O1

A0

I/O0

A11

A10

RST

NC

I/O3

I/O2

NC

VCC

CE

VCC

GND

GND

A12

A13

A14

I/O4

I/O6

I/O5

A15

NC

A16

I/O7

OE

RY/BY

A17

A18

A19

NC

NC

WE

CBGA Top View

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

16

17

18

19

20

21

22

44

43

42

41

40

39

38

37

36

35

34

33

32

31

30

29

28

27

26

25

24

23

NC

RESET

A11

A10

A9

A8

A7

A6

A5

A4

NC

NC

A3

A2

A1

A0

I/O0

I/O1

I/O2

I/O3

GND

GND

VCC

CE

A12

A13

A14

A15

A16

A17

A18

A19

NC

NC

NC

NC

WE

OE

RDY/BUSY

I/O7

I/O6

I/O5

I/O4

VCC

SOIC