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PRXC770 Datenblatt(PDF) 3 Page - Powerex Power Semiconductors

Teilenummer PRXC770
Bauteilbeschribung  Fast Switching Thyristor 2100 Amperes 2000 Volts
PDF  4 Pages
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Hersteller  POWEREX [Powerex Power Semiconductors]
Direct Link  http://www.pwrx.com
Logo POWEREX - Powerex Power Semiconductors

PRXC770 Datenblatt(HTML) 3 Page - Powerex Power Semiconductors

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PRX C770__
Fast Switching Thyristor
Powerex, Inc., 173 Pavilion Lane, Youngwood, PA
15697-1800 724-925-7272
WWW.PWRX.COM
2100 Amperes 2000 Volts
Electrical Characteristics, Tj=25°C unless otherwise specified
Rating
Characteristic
Symbol
Test Conditions
min
typ
max
Units
Repetitive Peak Forward
Leakage Current
IDRM
Tj=125°C, VDRM=Rated
150
ma
Repetitive Peak Reverse
Leakage Current
IRRM
Tj=125°C, VRRM=Rated
150
ma
Peak On-State Voltage
VTM
Tj=125°C, ITM=2000A
1.85
V
VTM Model, Low Level
V0
Tj=125°C
1.271
V
VTM = VO + r•ITM
r
15%
ITM - π•ITM
0.255
mΩ
VTM Model, High Level
4-Term
A
Tj=125°C
-1.657
VTM= A + B•Ln(ITM) +
B
15%ITM - ITSM
0.527
C•(I
TM) + D•(ITM)
½
C
0.000243
D
-0.02197
Turn-On Delay Time
td
VD = 0.5•VDRM
2
us
Gate Drive: 40V - 20Ω
Turn-Off Time
tq
Tj=125°C
60
us
dv/dt = 400V/us to 80% VDRM
Reverse Recovery Current
IR(Rec) Tj=125°C 1500A -10A/us
A
Reverse Recovery Charge
QRR
uCoul
dv/dt(Crit)
dv/dt
Tj=125°C Exp. Waveform
1000
V/us
VD =80% Rated
Gate Trigger Current
IGT
Tj=25°C VD = 12V
30
150
250
ma
Gate Trigger Voltage
VGT
0.8
2.0
4.0
V
Peak Reverse Gate Voltage
VGRM
10
V
Thermal Characteristics
Rating
Characteristic
Symbol
Test Conditions
min
typ
max
Units
Thermal Resistance
Junction to Case
RΘ
jc
Double side cooled
0.009
0.010
°C/Watt
Case to Sink
RΘ
cs
Double side cooled
0.0015
0.002
°C/Watt
Thermal Impedance Model
ZΘ
jc
Double side cooled
ZΘ
jc(t) = Σ(A(N)•(1-exp(-t/Tau(N))))
where:
N =
1
2
3
4
A(N
) = 1.13E-04 7.51E-04
3.53E-03
5.61E-03
Tau(N) = 6.54E-04 1.48E-02
1.89E-01
1.20E+00
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