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KSH5027F Datenblatt(PDF) 2 Page - SemiHow Co.,Ltd.

Teilenummer KSH5027F
Bauteilbeschribung  High Voltage and High Reliability
PDF  5 Pages
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Hersteller  SEMIHOW [SemiHow Co.,Ltd.]
Direct Link  http://www.semihow.com
Logo SEMIHOW - SemiHow Co.,Ltd.

KSH5027F Datenblatt(HTML) 2 Page - SemiHow Co.,Ltd.

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◎ SEMIHOW REV.A0,Oct 2007
High Voltage and High Reliability
- High Speed Switching
- Wide SOA
KSH5027F
CHARACTERISTICS
SYMBOL
RATING
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulse)
Base Current
Collector Dissipation(Tc=25℃)
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
1100
800
7
3
10
1.5
40
150
-55~150
V
V
V
A
A
A
W
℃
℃
Absolute Maximum Ratings TC=25℃ unless otherwise noted
CHARACTERISTICS
SYMBOL
Test Condition
Min
Typ.
Max
Unit
Collector-Base Breakdown Voltage
V
CBO
I
C=1mA, IE=0
1100
V
Collector-Emitter Breakdown Voltage
V
CEO
I
C=5mA, IB=0
800
V
Emitter-Base Breakdown Voltage
V
EBO
I
E=1mA, IE=0
7
V
Collector-Emitter Sustaining Voltage
I
CEX(sus)
I
C=1.5A, IB1=-IB2=0.3A
L=2mH, Clamped
800
V
Collector Cut0off Current
I
CBO
V
CB=800V,IE=0
10
㎂
Emitter Cutoff Current
I
EBO
V
EB=5V,IC=0
10
㎂
DC Current Gain
h
FE1
h
FE2
V
CE=5V,IC=0.2A
V
CE=5V,IC=1A
10
8
40
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C=1.5A,IB=0.3A
2
V
Base-Emitter Saturation Voltage
V
BE(sat)
I
C=1.5A,IB=0.3A
1.5
V
Output Capacitance
C
ob
V
CB=10V,IE=0, f=0.1MHz
60
㎊
Current Gain Bandwidth Product
f
T
V
CE=10V,IC=0.2A
15
㎒
Turn on Time
t
on
Vcc=400V, Ic=5A
I
B1=-2.5A, IB2=2A
R
L=200Ω
0.5
㎲
Storage Time
t
stg
3.0
㎲
Fall Time
t
f
0.3
㎲
Electrical Characteristics TC=25℃ unless otherwise noted
TO-220F
1. Base
2. Collector
3. Emitter
3 Amperes
NPN Silicon Power Transistor
50 Watts
1 2
3
Note :
h
FE1 Classification
R : 15 ~ 30,
O : 20 ~ 40



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