Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.

July. 2013. Rev. 3.0

1/5

SW6N90

Features

■ High ruggedness

■ R

Ω)@V

■ Gate Charge (Typical 40nC)

■ Improved dv/dt Capability

■ 100% Avalanche Tested

General Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics. It is mainly suitable for half bridge or full bridge resonant topology

like a electronic ballast, and also low power switching mode power appliances.

N-channel TO-262 MOSFET

Absolute maximum ratings

Symbol

Parameter

Value

Unit

Drain to Source Voltage

900

V

6.0*

A

3.78*

A

Drain current pulsed

(note 1)

24

A

Gate to Source Voltage

±30

V

Single pulsed Avalanche Energy

(note 2)

550

mJ

Repetitive Avalanche Energy

(note 1)

150

mJ

dv/dt

Peak diode Recovery dv/dt

(note 3)

5

V/ns

231

W

1.85

Operating Junction Temperature & Storage Temperature

-55 ~ + 150

Maximum Lead Temperature for soldering

purpose, 1/8 from Case for 5 seconds.

300

Thermal characteristics

Symbol

Parameter

Value

Unit

Thermal resistance, Junction to case

0.54

Thermal resistance, Case to Sink

-

Thermal resistance, Junction to ambient

65

BV

I

D

: 6.0A

R

1

2

3

1

3

1. Gate 2. Drain 3. Source

TO-262

2

SAMWIN

Item

Sales Type

Marking

Package

Packaging

1

SW U 6N90

SW6N90

TO-262

TUBE

Order Codes