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CMPT2222 Datenblatt(PDF) 1 Page - Central Semiconductor Corp

Teilenummer CMPT2222
Bauteilbeschribung  NPN SILICON TRANSISTOR
PDF  2 Pages
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Hersteller  CENTRAL [Central Semiconductor Corp]
Direct Link  http://www.centralsemi.com
Logo CENTRAL - Central Semiconductor Corp

CMPT2222 Datenblatt(HTML) 1 Page - Central Semiconductor Corp

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Central
Central
Central
Central
Central
Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.
TM
158
SOT-23 CASE
CMPT2222A
NPN SILICON TRANSISTOR
DESCRIPTION:
The
CENTRAL
SEMICONDUCTOR
CMPT2222A type is an NPN silicon transistor
manufactured by the epitaxial planar process,
epoxy molded in a surface mount package,
designed for small signal general purpose and
switching applications.
Marking Code is C1P.
MAXIMUM RATINGS (TA=25
oC)
SYMBOL
UNITS
Collector-Base Voltage
VCBO
75
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO
6.0
V
Collector Current
IC
600
mA
Power Dissipation
PD
350
mW
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
oC
Thermal Resistance
ΘJA
357
oC/W
ELECTRICAL CHARACTERISTICS (TA=25
oC unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
ICBO
VCB=60V
10
nA
ICBO
VCB=60V, TA=125
oC
10
µA
ICEV
VCE=60V, VEB=3.0V
10
nA
IEBO
VEB=3.0V
10
nA
BVCBO
IC=10µA
75
V
BVCEO
IC=10mA
40
V
BVEBO
IE=10µA
6.0
V
VCE(SAT)
IC=150mA, IB=15mA
0.3
V
VCE(SAT)
IC=500mA, IB=50mA
1.0
V
VBE(SAT)
IC=150mA, IB=15mA
0.6
1.2
V
VBE(SAT)
IC=500mA, IB=50mA
2.0
V
hFE
VCE=10V, IC=0.1mA
35
hFE
VCE=10V, IC=1.0mA
50
hFE
VCE=10V, IC=10mA
75
hFE
VCE=1.0V, IC=150mA
50


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