CMPT591E datasheet(1/2 Pages) CENTRAL

Teilenummer	CMPT591E

Bauteilbeschribung	SURFACE MOUNT PNP SILICON TRANSISTOR

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Hersteller	CENTRAL [Central Semiconductor Corp]

Direct Link	http://www.centralsemi.com

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DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMPT591E

type is a PNP silicon transistor manufactured by

the epitaxial planar process, epoxy molded in a

surface mount package, designed for high

current, general purpose amplifier applications.

Marking Code is C59.

MAXIMUM RATINGS: (TA=25°C)

SYMBOL

UNITS

Collector-Base Voltage

VCBO

80

V

Collector-Emitter Voltage

VCEO

60

V

Emitter-Base Voltage

VEBO

5.0

V

Collector Current

IC

1.0

A

Base Current

IB

200

mA

Collector Current (Peak)

ICM

2.0

A

Power Dissipation

PD

350

mW

Operating and Storage

Junction Temperature

TJ,Tstg

-65 to +150

°C

Thermal Resistance

ΘJA

357

°C/W

ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

ICBO

VCB=60V

100

nA

IEBO

VEB=4.0V

100

nA

BVCBO

IC=100µA

80

V

BVCEO

IC=10mA

60

V

BVEBO

IE=100µA

5.0

V

VCE(SAT)

IC=500mA, IB=50mA

0.20

V

VCE(SAT)

IC=1.0A, IB=100mA

0.40

V

VBE(SAT)

IC=1.0A, IB=100mA

1.1

V

VBE(ON)

VCE=5.0V, IC=1.0A

1.0

V

hFE

VCE=5.0V, IC=1.0mA

200

hFE

VCE=5.0V, IC=500mA

200

600

hFE

VCE=5.0V, IC=1.0A

50

hFE

VCE=5.0V, IC=2.0A

15

fT

VCE=10V, IC=50mA, f=100MHz

150

MHz

Cob

VCB=10V, IE=0, f=1.0MHz

10

pF

CMPT591E

SURFACE MOUNT

PNP SILICON TRANSISTOR

SOT-23 CASE

Central

Semiconductor Corp.

TM

R2 ( 30-August 2001)

Ähnliche Beschreibung - CMPT591E

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