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2SC2625 Datenblatt(PDF) 2 Page - Unisonic Technologies

Teilenummer 2SC2625
Bauteilbeschribung  HIGH VOLTAGE HIGH SPEED SWITCHING
PDF  3 Pages
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Hersteller  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

2SC2625 Datenblatt(HTML) 2 Page - Unisonic Technologies

  2SC2625 Datasheet HTML 1Page - Unisonic Technologies 2SC2625 Datasheet HTML 2Page - Unisonic Technologies 2SC2625 Datasheet HTML 3Page - Unisonic Technologies  
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2SC2625
NPN EPITAXIAL SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R214-009,B
ABSOLUTE MAXIMUM RATINGS (TC=25℃)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector Base Voltage
VCBO
450
V
VCEO
400
V
Collector Emitter Voltage
VCEO(SUS)
400
V
Emitter Base Voltage
VEBO
7
V
Collector Current
IC
10
A
Base Current
IB
3
A
Power Dissipation
PD
80
W
Junction Temperature
TJ
+150
℃
Storage Temperature
TSTG
-40 ~ +150
℃
ELECTRICAL SPECIFICATIONS (TC =25℃, Unless Otherwise Specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector Base Voltage
VCBO
ICBO=1mA
450
V
VCEO
ICEO=10mA
400
V
Collector Emitter Voltage
VCEO (SUS) IC=1A
400
V
Emitter Base Voltage
VEBO
IEBO=0.1mA
7
V
Collector-Emitter Saturation Voltage
VCE (Sat)
1.2
V
Base Emitter Saturation Voltage
VBE (Sat)
IC=4A, IB=0.8A
1.5
V
Collector Cut-off Current
ICBO
VCBO=450V
1.0
mA
Emitter Cut-off Current
IEBO
VEBO=7V
0.1
mA
DC Current Gain
hFE
IC=4A, VCE=5V
10
tON
1.0
µs
tSTG
2.0
µs
Switching Time
tF
IC=7.5A, IB1=-IB2=1.5A
RL=20Ω, Pw=20µs, Duty ≤ 2%
1.0
µs
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
RATINGS
UNIT
Thermal Resistance Junction to Case
θJC
1.55
℃
/W
SWITCHING TIME TEST CIRCUIT
RL=20Ω
IB1
IB2
IC
IB1
IB2
IC
0.9IC
0.1IC
ton
tstg
tf
PW=20μs



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