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UT3N10G-AE3-R Datenblatt(PDF) 1 Page - Unisonic Technologies |
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UT3N10G-AE3-R Datenblatt(HTML) 1 Page - Unisonic Technologies |
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1 / 4 page ![]() UNISONIC TECHNOLOGIES CO., LTD UT3N10 Power MOSFET www.unisonic.com.tw 1 of 4 Copyright © 2012 Unisonic Technologies Co., Ltd QW-R502-859.A N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UT3N10 is an N-channel power MOSFET providing very low on-resistance. It has high efficiency and perfect cost-effectiveness. It can be generally applied in the commercial and industrial fields. FEATURES * Simple drive requirement SYMBOL Gate Source Drain ORDERING INFORMATION Ordering Number Package Pin Assignment Packing Lead Free Halogen Free 1 2 3 UT3N10L-AE3-R UT3N10G-AE3-R SOT-23 S G D Tape Reel Note: Pin Assignment: G: Gate D: Drain S: Source MARKING |
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