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UTT36N10G-TN3-R Datenblatt(PDF) 2 Page - Unisonic Technologies

Teilenummer UTT36N10G-TN3-R
Bauteilbeschribung  36A, 100V N-CHANNEL POWER MOSFET
PDF  5 Pages
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Hersteller  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UTT36N10G-TN3-R Datenblatt(HTML) 2 Page - Unisonic Technologies

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UTT36N10
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 5
www.unisonic.com.tw
QW-R502-899. C
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
100
V
Gate-Source Voltage
VGSS
±20
V
Drain Current
Continuous
(VGS=10V) TC=25°C
ID
36
A
Pulsed
IDM
144
A
Single Pulsed Avalanche Energy (Note 2)
EAS
55
mJ
Power Dissipation
TO-220
PD
125
W
TO-220F
79
TO-252
44
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Starting TJ = 25°C, L = 0.27mH, IAS = 30A.
3. Pulse Width = 100s
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
TO-220
θJA
62.5
°C/W
TO-220F
62
TO-252
110
Junction to Case
TO-220
θJC
1
°C/W
TO-220F
1.58
TO-252
2.85
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX
UNI
T
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
100
V
Drain-Source Leakage Current
IDSS
VDS=100V, VGS=0V
1
µA
Gate- Source Leakage
Current
Forward
IGSS
VGS=+20V, VDS=0V
+100 nA
Reverse
VGS=-20V, VDS=0V
-100 nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
1
3
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=30A
32
43
mΩ
VGS=6V, ID=15A
40
72
mΩ
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=25V, f=1.0MHz
2233
pF
Output Capacitance
COSS
171
pF
Reverse Transfer Capacitance
CRSS
119
pF
SWITCHING PARAMETERS
Turn-ON Time
tON
VDD=30V, ID=1A, VGS=10V, RGS=50Ω
72
83
ns
Turn-ON Delay Time
tD(ON)
93
112
ns
Rise Time
tR
868 890
ns
Turn-OFF Delay Time
tD(OFF)
168 180
ns
Total Gate Charge at 10V
QG
VDD=40V, ID=36A, VGS=10V
180 200
nC
Gate to Source Charge
QGS
21
nC
Gate to Drain Charge
QGD
20
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
ISD=15A
1.0
V



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