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GI752 Datenblatt(PDF) 1 Page - Vishay Siliconix |
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GI752 Datenblatt(HTML) 1 Page - Vishay Siliconix |
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1 / 4 page ![]() GI750, GI751, GI752, GI754, GI756, GI758 www.vishay.com Vishay General Semiconductor Revision: 01-Aug-13 1 Document Number: 88627 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 High Current Axial Plastic Rectifier FEATURES • Low forward voltage drop • Low leakage current, IR less than 0.1 μA • High forward current capability • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in general purpose rectification of power supplies, inverters, converters, and freewheeling diodes application. Note • These devices are not AEC-Q101 qualified. MECHANICAL DATA Case: P600, void-free molded epoxy body Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: Color band denotes cathode end PRIMARY CHARACTERISTICS IF(AV) 6.0 A VRRM 50 V, 100 V, 200 V, 400 V, 600 V, 800 V IFSM 400 A IR 5.0 μA VF 0.9 V, 0.95 V TJ max. 150 °C Package P600 Diode variations Single die P600 MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL GI750 GI751 GI752 GI754 GI756 GI758 UNIT Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 V Maximum RMS voltage VRMS 35 70 140 280 420 560 V Maximum DC blocking voltage VDC 50 100 200 400 600 800 V Maximum non-repetitive peak reverse voltage VRSM 60 120 240 480 720 1200 V Maximum average forward rectified current at TA =60 °C, PCB mounting (fig. 1) IF(AV) 6.0 A TL = 60 °C,0.125" (3.18 mm) lead length (fig. 2) 22 Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 400 A Operating junction and storage temperature range TJ, TSTG - 50 to + 150 °C ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL GI750 GI751 GI752 GI754 GI756 GI758 UNIT Maximum instantaneous forward voltage at 6.0 A VF 0.90 0.95 V 100 A 1.25 1.30 Maximum DC reverse current at rated DC blocking voltage TA = 25 °C IR 5.0 μA TA = 100 °C 1.0 mA Typical reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 2.5 μs Typical junction capacitance 4.0 V, 1 MHz CJ 150 pF |
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