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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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IRFS3207TRLPBF Datenblatt(PDF) 1 Page - International Rectifier |
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IRFS3207TRLPBF Datenblatt(HTML) 1 Page - International Rectifier |
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1 / 12 page  03/06/06 Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free www.irf.com 1 D2Pak IRFS3207PbF TO-220AB IRFB3207PbF TO-262 IRFSL3207PbF IRFB3207PbF IRFS3207PbF IRFSL3207PbF HEXFET® Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits S D G S D G S D G S D G Absolute Maximum Ratings Symbol Parameter Units ID @ TC = 25°C Continuous Drain Current, V GS @ 10V A I D @ TC = 100°C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current d P D @TC = 25°C Maximum Power Dissipation W Linear Derating Factor W/°C V GS Gate-to-Source Voltage V dV/dt Peak Diode Recovery f V/ns T J Operating Junction and °C TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Avalanche Characteristics E AS (Thermally limited) Single Pulse Avalanche Energy e mJ IAR Avalanche Current à A E AR Repetitive Avalanche Energy g mJ Thermal Resistance Symbol Parameter Typ. Max. Units RθJC Junction-to-Case k ––– 0.50 RθCS Case-to-Sink, Flat Greased Surface , TO-220 0.50 ––– °C/W RθJA Junction-to-Ambient, TO-220 k ––– 62 RθJA Junction-to-Ambient (PCB Mount) , D 2Pak jk ––– 40 300 Max. 170 120 720 910 See Fig. 14, 15, 16a, 16b, 300 5.8 -55 to + 175 ± 20 2.0 10lb xin (1.1Nxm) VDSS 75V RDS(on) typ. 3.6m : max. 4.5m : ID 170A PD - 95708D |
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Ähnliche Beschreibung - IRFS3207TRLPBF |
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