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HBCA123JS6R Datenblatt(PDF) 2 Page - Cystech Electonics Corp.

Teilenummer HBCA123JS6R
Bauteilbeschribung  PNP and NPN Dual Digital Transistors
PDF  8 Pages
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Hersteller  CYSTEKEC [Cystech Electonics Corp.]
Direct Link  http://www.cystekec.com
Logo CYSTEKEC - Cystech Electonics Corp.

HBCA123JS6R Datenblatt(HTML) 2 Page - Cystech Electonics Corp.

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CYStech Electronics Corp.
Spec. No. : C156S6R
Issued Date : 2013.08.23
Revised Date : 2013.09.04
Page No. : 2/8
HBCA123JS6R
CYStek Product Specification
Absolute Maximum Ratings (Ta=25℃)
Limits
Parameter
Symbol
Tr1(NPN)
Tr2(PNP)
Unit
Supply Voltage
VCC
50
-50
V
Input Voltage
VIN
-5~+12
-12~+5
V
IO
100
-100
mA
Output Current
IO(max.)
100
-100
mA
Total Power Dissipation
Pd
150 (Note)
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
-55~+150
°C
Note : 120mW per element must not be exceeded.
Thermal Performance
Parameter
Symbol
Limit
Unit
Thermal Resistance, Junction-to-Ambient
RθJA
833
°C/W
Thermal Resistance, Junction-to-Case
RθJC
357
°C/W
Characteristics (Ta=25℃)
•Tr1(NPN)
Parameter
Symbol Min.
Typ.
Max. Unit
Test Conditions
VI(off)
-
-
0.5
V
VCC=5V, IO=100μA
Input Voltage
VI(on)
1.1
-
-
V
VO=0.3V, IO=5mA
Output Voltage
VO(on)
-
-
0.3
V
IO/II=5mA/0.25mA
Input Current
II
-
-
3.6
mA
VI=5V
Output Current
IO(off)
-
-
0.5
μA
VCC=50V, VI=0V
DC Current Gain
GI
80
-
-
-
VO=5V, IO=10mA
Input Resistance
R1
1.54
2.2
2.86
k
Ω
-
Resistance Ratio
R2/R1
17
21
26
-
-
Transition Frequency
fT
-
250
-
MHz VCE=10V, IC=5mA, f=100MHz *
* Transition frequency of the device



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