| Datenblatt-Suchmaschine für elektronische Bauteile |
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STPS1L60 Datenblatt(PDF) 5 Page - STMicroelectronics |
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STPS1L60 Datenblatt(HTML) 5 Page - STMicroelectronics |
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5 / 10 page ![]() STPS1L60 Characteristics Doc ID 7504 Rev 8 5/10 Figure 13. Reverse leakage current versus reverse voltage applied (typical values) Figure 14. Junction capacitance versus reverse voltage applied (typical values) 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 0 5 10 15 20 25 30 35 40 45 50 55 60 Tj = 25 °C Tj = 50 °C Tj = 75 °C Tj = 125 °C Tj = 150 °C Tj = 100 °C VR(V) IR(mA) 10 100 1000 1 10 100 F = 1 MHz Vosc = 30 mVRMS Tj = 25 °C C(pF) VR(V) Figure 15. Forward voltage drop versus forward current (typical values, high level) Figure 16. Forward voltage drop versus forward current (typical values, low level) 0.01 0.10 1.00 10.00 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Tj = 25 °C Tj = 125 °C IFM(A) VFM(V) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 IFM(A) VFM(V) Tj = 125 °C Tj = 25 °C |
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