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IXDD509PI Datenblatt(PDF) 1 Page - IXYS Corporation |
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IXDD509PI Datenblatt(HTML) 1 Page - IXYS Corporation |
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1 / 10 page ![]() First Release Features • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected up to 9 Amps • High 9A peak output current • Wide operating range: 4.5V to 30V • -55°C to +125°C Extended operating temperature • Ability to disable output under faults • High capacitive load drive capability: 1800pF in <15ns • Matched rise and fall times • Low propagation delay time • Low output impedance • Low supply current Applications • Driving MOSFETs and IGBTs • Limiting di/dt under short circuit • Motor controls • Line drivers • Pulse generators • Local power ON/OFF switch • Switch mode power supplies (SMPS) • DC to DC converters • Pulse transformer driver • Class D switching amplifiers • Power charge pumps General Description The IXDD509 and IXDE509 are high speed high current gate drivers specifically designed to drive the largest IXYS MOSFETs & IGBTs to their minimum switching time and maximum parctical frequency limits. The IXDD509 and IXDE509 can source and sink 9 Amps of Peak Current while producing voltage rise and fall times of less than 30ns. The inputs of the Drivers are compatible with TTL or CMOS and are virtually immune to latch up over the entire operating range. Patented* design innovations eliminate cross conduction and current "shoot-through". Improved speed and drive capabilities are further enhanced by matched rise and fall times. The IXDD509 and IXDE509 incorporate a unique ability to disable the output under fault conditions. When a logical low is forced into the Enable input, both final output stage MOSFETs, (NMOS and PMOS) are turned off. As a result, the output of the IXDD509 or IXDE509 enters a tristate high impedance mode and with additional circuitry, achieves a Soft Turn-Off of the MOSFET/IGBT when a short circuit is detected. This helps prevent damage that could occur to the MOSFET/IGBT if it were to be switched off abruptly due to a dv/dt over-voltage transient. The IXDD509 and IXDE509 are available in the 8-Pin P-DIP (PI) package, the 8-Pin SOIC (SIA) package, and the 6- Lead DFN (D1) package, (which occupies less than 65% of the board area of the 8-Pin SOIC). *United States Patent 6,917,227 Ordering Information Part Number Description Package Type Packing Style Pack Qty Configuration IXDD509PI 9A Low Side Gate Driver I.C. 8-Pin PDIP Tube 50 IXDD509SIA 9A Low Side Gate Driver I.C. 8-Pin SOIC Tube 94 IXDD509SIAT/R 9A Low Side Gate Driver I.C. 8-Pin SOIC 13” Tape and Reel 2500 IXDD509D1 9A Low Side Gate Driver I.C. 6-Lead DFN 2” x 2” Waffle Pack 56 IXDD509D1T/R 9A Low Side Gate Driver I.C. 6-Lead DFN 13” Tape and Reel 2500 Non-Inverting with Enable IXDE509PI 9A Low Side Gate Driver I.C. 8-Pin PDIP Tube 50 IXDE509SIA 9A Low Side Gate Driver I.C. 8-Pin SOIC Tube 94 IXDE509SIAT/R 9A Low Side Gate Driver I.C. 8-Pin SOIC 13” Tape and Reel 2500 IXDE509D1 9A Low Side Gate Driver I.C. 6-Lead DFN 2” x 2” Waffle Pack 56 IXDE509D1T/R 9A Low Side Gate Driver I.C. 6-Lead DFN 13” Tape and Reel 2500 Inverting with Enable DS99679A(10/07) NOTE: All parts are lead-free and RoHS Compliant Copyright © 2007 IXYS CORPORATION All rights reserved 9 Ampere Low-Side Ultrafast MOSFET Drivers with Enable for fast, controlled shutdown IXDD509 / IXDE509 |
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