2

Electrical Specifications

1. Small/Large -signal data measured in a fully de-embedded test fixture form TA = 25°C.

2. Pre-assembly into package performance verified 100% on-wafer.

3. This final package part performance is verified by a functional test correlated to actual performance at one or

more frequencies.

4. Specifications are derived from measurements in a 50 Ω test environment. Aspects of the amplifier performance

may be improved over a more narrow bandwidth by application of additional conjugate, linearity, or low noise

(Гopt) matching.

5. NF is measure on-wafer. Additional bond wires (-0.2nH) at Input could improve NF at some frequencies.

Table 1. RF Electrical Characteristics

TA=25°C, Zo=50 Ω, LO=+15dBm, IF=2GHz

Parameter

RF=18-30GHz, LO=9-15GHz

RF=30-40GHz, LO=15-20GHz

Unit

Comment

Min

Typ

Max

Min

Typ

Max

11

12

13

dB

RF: 18-24GHz

10.5

11

12

dBm

RF: 24-30GHz

8.5

11

12

dBm

2LO-R Leakage, 2LO-R

-45

-40

-40

dBm

2LO-I Leakage, 2LO-I

-60

-50

-55

dBm

L-R Leakage, L-R

-30

-35

dB

L-I Leakage, L-I

-35

-30

dB

Note:

1.Production RF tested at 21, 23 and 26 GHz in upconverter configuration

All tested parameters are guaranteed with the following measurement accuracy:

RF=18-24 GHz: ±0.8 dBm for RF-leakage, ±2.5 dBm for IF-leakage, ±1.2dB for Conversion Loss, ±0.5 dBm for IIP3

RF=24-30 GHz: ±0.8 dBm for RF-leakage, ±4.0 dBm for IF-leakage, ±0.6 dB for Conversion Loss, ±0.5 dBm for IIP3

Table 2. Recommended Operating Range

1. Ambient operational temperature TA = 25°C unless otherwise noted.

2. Channel-to-backside Thermal Resistance (Tchannel (Tc) = 34°C) as measured using infrared microscopy. Thermal

Resistance at backside temperature (Tb) = 25°C calculated from measured data.

Parameter

Min.

Typical

Max.

Unit

Comments

RF Frequency, RFfreq

18

40

GHz

LO Frequency, LOfreq

9

20

GHz

IF Frequency, IFfreq

DC

3.5

GHz

LO Power, LO

+12

+15

+22

dBm

Min Ambient Operating Temp, Tmin

-55

°C

Max Ambient Operating Temp, Tmax

+125

°C

Absolute Minimum and Maximum Ratings

Table 3. Minimum and Maximum Ratings

Pin

Min.

Max.

Unit

Comments

RF CW Input Power, Pin

25

dB

Storage Temperature, Tstg

-65

+150

°C

Maximum Assembly Temperature, Tmax

260

°C

20 second maximum

Notes:

1. Operation in excess of any one of these conditions may result in permanent damage to this device.