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SP42450

SP42450

High-Isolation RF Switch

Table 3. Pin Descriptions

Electrostatic Discharge (ESD) Precautions

When handling this Silicon-on-Sapphire device, observe the

same precautions that you would use with other ESD-

sensitive devices. Although this device contains circuitry to

protect it from damage due to ESD, precautions should be

taken to avoid exceeding the specified rating.

Latch-Up Avoidance

Unlike conventional CMOS devices, Silicon-on-Sapphire

devices are immune to latch-up.

Table 4. Absolute Maximum Ratings

Exceeding absolute maximum ratings may cause permanent

damage. Operation should be restricted to the limits in the

Operating Ranges table.

Symbol

Parameter/Conditions

Min

Max

Units

Storage temperature range

-60

+150

°C

Maximum Operating Power (RFX

-RFC, All Bands (50Ω), 100%

duty cycle)

33

dBm

Maximum power into termination

(RFX, All Bands (50Ω),100%

duty cycle)

24

dBm

3500

V

150

V

Notes: 6. Human Body Model ESD Voltage (HBM, MIL_STD 883

Method 3015.7)

7. Machine Model ESD Voltage (JESD22-A115-A)

Mode

V3

V2

V1

All off

0

0

0

RF1 on

0

0

1

RF2 on

0

1

0

RF3 on

0

1

1

RF4 on

1

0

0

RF5 on

1

0

1

All off

1

1

0

Unsupported

1

1

1

Table 5. Truth Table

Exposed

Ground

Paddle

GND

RF5

GND

GND

GND

Vdd

V1

V2

RF4

18

17

16

15

14

13

2

3

4

5

6

1

RF1

GND

GND

Figure 3. Pin Configuration (Top View)

Moisture Sensitivity Level

The Moisture Sensitivity Level rating for the SP42450 in the

24-lead 4x4 QFN package is MSL1.

Note:

4. Blocking capacitors needed only when non-zero DC voltage

present.

5. Pin 20 must be grounded when using internal Vss supply

Switching Frequency

The SP42450 has a maximum 25 kHz switching rate when

the internal negative voltage generator is used (pin

20=GND). The rate at which the SP42450 can be switched

is only limited to the switching time if an external -3 V

Pin #

Name

Description

1, 3, 4, 6, 7, 9, 10,

12, 13, 15, 21, 23, 24

GND

Ground

2

RF I/O

5

RF I/O

8

RF I/O

11

RF I/O

14

RF I/O

16

Supply

17

V1

Switch control input, CMOS logic level

18

V2

Switch control input, CMOS logic level

19

V3

Switch control input, CMOS logic level

20

External Vss Control / Ground

22

Paddle

GND

Ground for proper device operation

grounded or at the Vss voltage specified in the

pin on the package is grounded the switch FET’s are biased

with an internal low spur negative voltage generator. For

applications that require the lowest possible spur

negative voltage generator to eliminate the spurs.