MMSTA13 datasheet(1/1 Pages) DIODES

Teilenummer	MMSTA13

Bauteilbeschribung	NPN SURFACE MOUNT DARLINGTON TRANSISTOR

PDF	1 Pages

Scroll/Zoom	100%

Hersteller	DIODES [Diodes Incorporated]

Direct Link	http://www.diodes.com

Logo

1 / 1 page

DS30165 Rev. B-1

1 of 1

MMSTA13/MMSTA14

NPN SURFACE MOUNT DARLINGTON TRANSISTOR

·

Epitaxial Planar Die Construction

·

Complementary PNP Type Available

(MMSTA63/MMSTA64)

·

Ideal for Medium Power Amplification and

Switching

·

High Current Gain

·

Ultra-Small Surface Mount Package

Features

Maximum Ratings

@ TA = 25

°C unless otherwise specified

A

E

J

L

M

B C

H

G

D

K

TOP VIEW

C

E

B

Mechanical Data

·

Case: SOT-323, Molded Plastic

·

Terminals: Solderable per MIL-STD-202,

Method 208

·

Terminal Connections: See Diagram

·

MMSTA13 Marking K2D, K3D

·

MMSTA14 Marking K3D

·

Weight: 0.006 grams (approx.)

Notes:

1. Valid provided that terminals are kept at ambient temperature.

2. Pulse test: Pulse width

£ 300ms, duty cycle £ 2%.

SOT-323

Dim

Min

Max

A

0.30

0.40

B

1.15

1.35

C

2.00

2.20

D

0.65 Nominal

E

0.30

0.40

G

1.20

1.40

H

1.80

2.20

J

0.0

0.10

K

0.90

1.00

L

0.25

0.40

M

0.10

0.25

All Dimensions in mm

Characteristic

Symbol

MMSTA13

MMSTA14

Unit

Collector-Base Voltage

VCBO

30

V

Collector-Emitter Voltage

VCEO

30

V

Emitter-Base Voltage

VEBO

10

V

Collector Current - Continuous (Note 1)

IC

300

mA

Power Dissipation (Note 1)

Pd

200

mW

Thermal Resistance, Junction to Ambient (Note 1)

RqJA

625

K/W

Operating and Storage and Temperature Range

Tj,TSTG

-55 to +150

°C

Electrical Characteristics @ TA = 25°C unless otherwise specified

Characteristic

Symbol

Min

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 2)

Collector-Emitter Breakdown Voltage

V(BR)CEO

30

¾

V

IC = 100

mAVBE = 0V

Collector Cutoff Current

ICBO

¾

100

nA

VCB = 30V, IE = 0

Emitter Cutoff Current

IEBO

¾

100

nA

VEB = 10V, IC = 0

ON CHARACTERISTICS (Note 2)

DC Current Gain

MMSTA13

MMSTA14

MMSTA13

MMSTA14

hFE

5,000

10,000

20,000

¾¾

IC = 10mA, VCE = 5.0V

IC = 100mA, VCE = 5.0V

Collector-Emitter Saturation Voltage

VCE(SAT)

¾

1.5

V

IC = 100mA, IB = 100

mA

Base- Emitter Saturation Voltage

VBE(SAT)

¾

2.0

V

IC = 100mA, VCE = 5.0V

SMALL SIGNAL CHARACTERISTICS

Output Capacitance

Cobo

8.0 Typical

pF

VCB = 10V, f = 1.0MHz, IE = 0

Input Capacitance

Cibo

15 Typical

pF

VEB = 0.5V, f = 1.0MHz, IC = 0

Current Gain-Bandwidth Product

fT

125

¾

MHz

VCE = 5.0V, IC = 10mA,

f = 100MHz

Ähnliche Beschreibung - MMSTA13

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
Diodes Incorporated	MMBTA28	62Kb / 3P	NPN SURFACE MOUNT DARLINGTON TRANSISTOR DS30367 Rev. 2 - 2
	MMBT6427	166Kb / 4P	NPN SURFACE MOUNT DARLINGTON TRANSISTOR DS30048 Rev. 8 - 2
	MMST6427	360Kb / 3P	NPN SURFACE MOUNT DARLINGTON TRANSISTOR DS30166 Rev. 9 - 2
	MMST6427	120Kb / 3P	NPN SURFACE MOUNT DARLINGTON TRANSISTOR Rev. 10 - 2
	MMBTA28	110Kb / 3P	NPN SURFACE MOUNT DARLINGTON TRANSISTOR DS30367 Rev. 9 - 2
	MMBTA13	120Kb / 3P	NPN SURFACE MOUNT DARLINGTON TRANSISTOR Rev 11
	MMSTA13	117Kb / 3P	NPN SURFACE MOUNT DARLINGTON TRANSISTOR Rev 9
Micro Commercial Compon...	BCV47	381Kb / 4P	NPN Surface Mount Darlington Transistor
Micro Commercial Compon...	MMBTA28	855Kb / 4P	NPN Surface Mount Darlington Transistor
Guangdong Kexin Industr...	MMSTA13	72Kb / 3P	NPN Surface Mount Darlington Transistor

More results

MMSTA13 Datenblatt(PDF) 1 Page - Diodes Incorporated

MMSTA13 Datenblatt(HTML) 1 Page - Diodes Incorporated

Ähnliche Teilenummer - MMSTA13

Ähnliche Beschreibung - MMSTA13

Html Pages

1

Datenblatt Download

Link URL