54HSC datasheet(5/10 Pages) DYNEX

5 / 10 page

54HSC/T630

5/10

Total dose radiation not

exceeding 3x10

5 Rad(SI)

Symbol

Parameter

Conditions

Min

Typ

Max

Units

VDD

Supply Voltage

4.5

5.0

5.5

VIH1

TTL Input High Voltage

2.0

VIL1

TTL Input Low Voltage

0.8

VIH2

CMOS Input High Voltage

3.5

VIL2

CMOS Input Low Voltage

1.5

VOH1

TTL Output High Voltage

IOH = -4mA

2.4

VOL1

TTL Output Low Voltage

IOL = 12mA (CB or DB),

0.4

IOL = 4mA (SEF or DEF)

VOH2

CMOS Output High Voltage

IOH = -4mA

VDD-0.5

VOL2

CMOS Output Low Voltage

IOL = 12mA (CB or DB),

0.5

IOL = 4mA (SEF or DEF)

I1L

Input Low Current

VDD = 5.5, VIN = VSS

-10

µA

I1H

Input High Current

VDD = 5.5, VIN = VDD

µA

I2L

IO Low Current

VDD = 5.5, VIN = VSS

-50

µA

I2H

IO High Current

VDD = 5.5, VIN = VDD

µA

IDD

Power Supply Current

VDD = Max, S0 & S1 at

5.5V, All CB & DB pins

grounded, DEF & SEF

open

VDD = 5V±10%, over full operating temperature range.

Mil-Std-883, method 5005, subgroups 1, 2, 3

Parameters at higher radiation levels available on request.

Table 6: Electrical Characteristics

Parameter

tPLH Propogation delay time, low-to-high-level output (Note 4)

tPLH Propogation delay time, low-to-high-level output (Note 5)

tPZH Output enable time to high level (Note 6)

tPZL Output enable time to low level (Note 6)

tPHZ Output disable time to high level (Note 7)

tPLZ Output disable time to low level (Note 7)

tS Set-up time to S1 ›

tH Hold time after S1 ›

1. V

DD = 5V ±10% and CL = 50pF, over full operating temperature and total dose = 300K Rad(Si)

2. Input Pulse V

SS to 3.0 Volts.(TTL), VDD -1V (CMOS).

3. Times Measurement Reference Level 1.5 Volts.

4. These parameters describe the time intervals taken to generate the check word during the memory write cycle.

5. These parameters describe the time intervals taken to flag errors during memory read cycle.

6. These parameters describe the time intervals taken to correct and output the data word and to generate and output the syndrome error code during

the memory read cycle.

7. These parameters describe the time intervals taken to disable the CB & DB buses in preparation for a new data word during the memory read cycle.

8. Mil-Std-883, method 5005, subgroups 9, 10, 11

Parameters at higher radiation levels available on request.

From

(Input)

⇑

⇓

⇑

CB, DB

(Output)

DEF

SEF

CB, DB

Min.

Max.

Units

Conditions (HST)

S0 = 0V, S1 = 0V

S0 = 3V

S1 = 3V (fig. 5)

S1 = 3V (fig. 4)

S1 = 3V (fig. 5)

S1 = 3V (fig. 4)

Conditions (HSC)

S0 = 0V, S1 = 0V

S0 = VDD-1V

S1 = VDD-1V (fig. 5)

S1 = VDD-1V (fig. 4)

S1 = VDD-1V (fig. 5)

S1 = VDD-1V (fig. 4)

AC ELECTRICAL CHARACTERISTICS

Table 7: AC Electrical Characteristics

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