| Datenblatt-Suchmaschine für elektronische Bauteile |
|
TA329Q Datenblatt(PDF) 4 Page - Dynex Semiconductor |
|
|
|||||||||||||||||||||||||||||
TA329Q Datenblatt(HTML) 4 Page - Dynex Semiconductor |
|
4 / 10 page ![]() TA329..Q 4/10 CURVES Fig.1 Energy per pulse for sinusoidal pulses. Notes: 1. VD ≤ 600V. 2. VR = DF451 Diode voltage drop. 3. R.C. snubber. C = 0.1 µF, R = 33Ω. 4. Double side cooled. Fig.2 Maximum allowable peak on-state current vs pulse width for Tcase = 65˚C. Notes: 1. VD ≤ 600V. 2. VR = DF451 Diode voltage drop. 3. R.C. snubber. C = 0.1 µF, R = 33Ω. 4. Double side cooled. |
|
|
Link URL |
| War ALLDATASHEET hilfreich? [ DONATE ] |
Über Alldatasheet | Werbung | Kontakt | Privatsphäre und Datenschutz | Link zum Datenblatt | Linktausch | Hersteller All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |