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2SC5507 Datenblatt(PDF) 4 Page - NEC

Teilenummer 2SC5507
Bauteilbeschribung  NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD
PDF  12 Pages
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Hersteller  NEC [NEC]
Direct Link  http://www.nec.com/
Logo NEC - NEC

2SC5507 Datenblatt(HTML) 4 Page - NEC

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Preliminary Data Sheet P13864EJ1V0DS00
4
2SC5507
Gain Characteristics
Collector Current IC (mA)
Collector Current IC (mA)
Insertion Power Gain, Maximum Available Power Gain,
Maximum Stable Power Gain vs. Frequency
Insertion Power Gain, Maximum Stable Power Gain
vs. Collector Current
Insertion Power Gain, Maximum Available Power Gain,
Maximum Stable Power Gain vs. Collector Current
40
35
30
25
20
15
10
5
0
30
25
20
15
10
5
0
30
25
20
15
10
5
0
Frequency f (GHz)
0.1
1.0
10.0
1
10
100
1
10
100
MAG
MSG
|S21e|2
VCE = 2 V
IC = 5 mA
MSG
|S21e|2
MSG
|S21e|2
MAG
f = 2 GHz
VCE = 2 V
f = 1 GHz
VCE = 2 V
Output Characteristics
Input Power Pin (dBm)
Output Power, Collector Current vs. Input Power
10
5
0
–5
–10
–15
25
20
15
10
5
0
25
20
15
10
5
0
–30
–25
–20
–15
–10
–5
Pout
IC
f = 1 GHz
VCE = 2 V
Input Power Pin (dBm)
Output Power, Collector Current vs. Input Power
10
5
0
–5
–10
–15
–30
–25
–20
–15
–10
–5
Pout
IC
f = 2 GHz
VCE = 2 V



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