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2SC5508 Datenblatt(PDF) 3 Page - NEC

Teilenummer 2SC5508
Bauteilbeschribung  NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD
PDF  16 Pages
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Hersteller  NEC [NEC]
Direct Link  http://www.nec.com/
Logo NEC - NEC

2SC5508 Datenblatt(HTML) 3 Page - NEC

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Preliminary Data Sheet P13865EJ1V0DS00
3
2SC5508
TYPICAL CHARACTERISTICS (TA = +25 °C)
Thermal/DC Characteristics
Collector Current vs. Collector to Emitter Voltage
DC Current Gain vs. Collector Current
0.001
200
100
10
01
2
3
4
5
1
0.01
0.1
1
10
100
Collector to Emitter Voltage VCE (V)
Collector Current IC (mA)
Total Power Dissipation vs.
Ambient Temperature, Case Temperature
Collector Current vs. DC Base Voltage
50
40
30
20
10
250
200
150
100
50
0
50
40
30
20
10
0
Ambient Temperature TA (
°C), Case Temperature TC (°C)
DC Base Voltage VBE (V)
0
25
50
75
100
125
150
0
0.2
0.4
0.6
0.8
1.0
1.2
PT-TA: Free air
PT-TA: Mounted on ceramic board
(15 mm
× 15 mm, t = 0.6 mm)
PT-TC: When case temperature
is specified
VCE = 2 V
700 A
µµ
750 A
VCE = 2 V
650 A
600 A
550 A
500 A
450 A
400 A
350 A
300 A
250 A
200 A
150 A
100 A
µ
µ
µ
µ
µ
µ
µ
µ
µ
µ
µ
µ
µ
IB = 50 A
Capacitance/fT Characteristics
Reverse Transfer Capacitance vs. Collector to Base Voltage
0.50
0.40
0.30
0.20
0.10
0
Collector to Base Voltage VCB (V)
0
1.0
2.0
3.0
4.0
5.0
f = 1 MHz
1
30
25
20
15
10
5
0
10
100
Gain Bandwidth Product vs. Collector Current
Collector Current IC (mA)
VCE = 3 V
f = 2 GHz



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