SSG4401P datasheet(2/4 Pages) SECOS

2 / 4 page

Elektronische Bauelemente

SSG4401P

-3.6 A, -150 V, RDS(ON) 160 mΩ

Ω

P-Ch Enhancement Mode Power MOSFET

10-Sep-2013 Rev. A

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Teat Conditions

Static

Gate-Threshold Voltage

VGS(th)

-1

VDS= VGS, ID= -250µA

Gate-Body Leakage Current

IGSS

±100

VDS=0, VGS= ±20V

-1

VDS= -120V, VGS=0

Zero Gate Voltage Drain Current

IDSS

-25

µA

VDS= -120V, VGS=0, TJ=55°C

On-State Drain Current

ID(on)

-5

VDS= -5V, VGS= -10V

160

VGS= -10V, ID= -2.8A

Drain-Source On-Resistance

RDS(ON)

170

VGS= -5.5V, ID= -2.3A

Forward Transconductance

gfs

VDS= -15V, ID= -2.8A

Diode Forward Voltage

VSD

-0.76

IS= -2.1A, VGS=0

Dynamic

Input Capacitance

Ciss

7944

Output Capacitance

Coss

290

Reverse Transfer Capacitance

Crss

262

VDS=-15V

VGS=0

f=1MHz

Total Gate Charge

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

ID= -2.8A

VDS= -75V

VGS= -4.5V

Turn-On Delay Time

Td(on)

Rise Time

Turn-Off Delay Time

Td(off)

130

Fall Time

VDs= -75V

ID= -2.8A

VGEN= -10V

RL=26.8

RG=6

Notes:

Pulse test：PW ≦ 300µs duty cycle ≦ 2%.

Guaranteed by design, not subject to production testing.

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